N-channel MOSFET. PSMN020-30MLC Datasheet

PSMN020-30MLC MOSFET. Datasheet pdf. Equivalent

PSMN020-30MLC Datasheet
Recommendation PSMN020-30MLC Datasheet
Part PSMN020-30MLC
Description N-channel MOSFET
Feature PSMN020-30MLC; PSMN020-30MLC N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology 4 S.
Manufacture nexperia
Datasheet
Download PSMN020-30MLC Datasheet




nexperia PSMN020-30MLC
PSMN020-30MLC
N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33
using TrenchMOS Technology
4 September 2012
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
Low parasitic inductance and resistance
Optimised for 4.5V Gate drive utilising Superjunction technology
Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads
1.3 Applications
DC-to-DC converters
Load switching
Synchronous buck regulator
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 4.5 V; ID = 5 A; Tj = 25 °C;
resistance
Fig. 10
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 10
Dynamic characteristics
QGD
gate-drain charge
VGS = 4.5 V; ID = 5 A; VDS = 15 V;
Fig. 12; Fig. 13
QG(tot)
total gate charge
VGS = 4.5 V; ID = 5 A; VDS = 15 V;
Fig. 12; Fig. 13
Min Typ Max Unit
- - 30 V
- - 31.8 A
- - 33 W
-55 -
175 °C
-
20.5 27
- 14.7 18.1 mΩ
- 1.7 - nC
- 4.6 - nC



nexperia PSMN020-30MLC
Nexperia
PSMN020-30MLC
N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
2 S source
3 S source
4 G gate
mb D
mounting base; connected to
drain
1234
LFPAK33 (SOT1210)
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN020-30MLC
LFPAK33
Description
Plastic single ended surface mounted package (LFPAK33); 4
leads
Version
SOT1210
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
VGS = 10 V; Tmb = 100 °C; Fig. 1
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage MM (JEDEC JESD22-A115)
Source-drain diode
IS source current
Tmb = 25 °C
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C
Min Max Unit
- 30 V
-20 20
V
- 31.8 A
- 22.5 A
- 127 A
- 33 W
-55 175 °C
-55 175 °C
- 260 °C
130 -
V
- 27.4 A
- 127 A
PSMN020-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 September 2012
© Nexperia B.V. 2017. All rights reserved
2 / 13



nexperia PSMN020-30MLC
Nexperia
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
PSMN020-30MLC
N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using
TrenchMOS Technology
Conditions
Min Max Unit
VGS = 10 V; Tj(init) = 25 °C; ID = 31 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped;
Fig. 3
- 7.7 mJ
40
ID
(A)
30
003aak267
120
Pder
(%)
80
03na19
20
40
10
0
0 30 60 90 120 150 180
Tj (°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0 50 100 150 200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
102
IAL
(A)
10
1
003aak268
(1)
(2)
10-1
10-3
10-2
10-1
1
10
tAL (ms)
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
PSMN020-30MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 September 2012
© Nexperia B.V. 2017. All rights reserved
3 / 13







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