N-channel MOSFET. PSMN3R9-25MLC Datasheet

PSMN3R9-25MLC MOSFET. Datasheet pdf. Equivalent

PSMN3R9-25MLC Datasheet
Recommendation PSMN3R9-25MLC Datasheet
Part PSMN3R9-25MLC
Description N-channel MOSFET
Feature PSMN3R9-25MLC; PSMN3R9-25MLC N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev..
Manufacture nexperia
Datasheet
Download PSMN3R9-25MLC Datasheet




nexperia PSMN3R9-25MLC
PSMN3R9-25MLC
N-channel 25 V 4.15 mlogic level MOSFET in LFPAK33
using NextPower Technology
Rev. 4 — 15 June 2012
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Low parasitic inductance and
resistance
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
1.3 Applications
DC-to-DC converters
Load switching
Synchronous buck regulator
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Conditions
Tj = 25°C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
see Figure 10
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 10
VGS = 4.5 V; ID = 25 A; VDS = 12.5 V;
see Figure 12; see Figure 13
VGS = 4.5 V; ID = 25 A; VDS = 12.5 V;
see Figure 12; see Figure 13
[1] Continuous current is limited by package.
Min Typ Max Unit
- - 25 V
[1] - - 70 A
- - 69 W
-55 -
175 °C
- 4.85 5.55 m
- 3.65 4.15 m
- 2.3 - nC
- 9.7 - nC



nexperia PSMN3R9-25MLC
Nexperia
PSMN3R9-25MLC
N-channel 25 V 4.15 mlogic level MOSFET in LFPAK33 using NextPower Technology
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
Simplified outline
S source
S source
S source
G gate
D mounting base; connected to
drain
1234
SOT1210 (LFPAK33)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN3R9-25MLC
LFPAK33
4. Limiting values
Description
Plastic single ended surface mounted package (LFPAK33);
4 leads
Version
SOT1210
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage
Tj = 25°C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
IDM peak drain current
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 4
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2
MM (JEDEC JESD22-A115)
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 70 A;
Vsup 25 V; RGS = 50 ; unclamped;
see Figure 3
[1] Continuous current is limited by package.
PSMN3R9-25MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 15 June 2012
Min
-
-20
[1] -
-
-
Max Unit
25 V
20 V
70 A
69 A
390 A
- 69 W
-55 175 °C
-55 175 °C
- 260 °C
230 -
V
- 63 A
- 390 A
- 34.5 mJ
© Nexperia B.V. 2017. All rights reserved
2 of 14



nexperia PSMN3R9-25MLC
Nexperia
PSMN3R9-25MLC
N-channel 25 V 4.15 mlogic level MOSFET in LFPAK33 using NextPower Technology
100
ID
(A)
80
60
40
20
0
0
003aaj777
(1)
50 100 150 200
Tmb(°C)
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
102
IAL
(A)
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aaj778
(1)
(2)
1
10-3
10-2
10-1
1 10
tAL(ms)
Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
PSMN3R9-25MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 15 June 2012
© Nexperia B.V. 2017. All rights reserved
3 of 14







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