N-channel MOSFET. PSMN3R9-100YSF Datasheet

PSMN3R9-100YSF MOSFET. Datasheet pdf. Equivalent

PSMN3R9-100YSF Datasheet
Recommendation PSMN3R9-100YSF Datasheet
Part PSMN3R9-100YSF
Description N-channel MOSFET
Feature PSMN3R9-100YSF; PSMN3R9-100YSF NextPower 100 V, 4.3 mΩ N-channel MOSFET in LFPAK56 package 17 February 2020 Prel.
Manufacture nexperia
Datasheet
Download PSMN3R9-100YSF Datasheet




nexperia PSMN3R9-100YSF
PSMN3R9-100YSF
NextPower 100 V, 4.3 mΩ N-channel MOSFET in LFPAK56
package
17 February 2020
Preliminary data sheet
1. General description
NextPower 100 V, standard level gate drive MOSFET. Qualified to 150 °C and recommended for
industrial and consumer applications.
2. Features and benefits
Low Qrr for higher efficiency and lower spiking
120 A ID (max) – demonstrated continuous current rating
Low QG × RDSon FOM for high efficiency switching applications
Strong avalanche energy rating (Eas)
Avalanche rated and 100% tested
Ha-free and RoHS compliant LFPAK56 package
Wave-solderable LFPAK56 package
3. Applications
Synchronous rectifier in AC-DC and DC-DC
Primary side switch – 48 V DC-DC
BLDC motor control
USB-PD adapters
Full-bridge and half-bridge applications
Flyback and resonant topologies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Conditions
25 °C ≤ Tj ≤ 150 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Tmb = 25 °C; Fig. 1
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 11
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 12; Fig. 13
Min Typ Max Unit
- - 100 V
- - 120 A
- - 245 W
-55 -
150 °C
- 3.3 4.3 mΩ
- 5.1 6.9 mΩ
- 15.8 35.6 nC
- 79 111 nC



nexperia PSMN3R9-100YSF
Nexperia
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Source-drain diode
Qr recovered charge
[1] Protected by 100% test
PSMN3R9-100YSF
NextPower 100 V, 4.3 mΩ N-channel MOSFET in LFPAK56 package
Conditions
Min Typ Max Unit
ID = 55 A; Vsup ≤ 100 V; RGS = 50 Ω; [1]
-
-
310 mJ
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 50 V; Fig. 16
- 44 66 nC
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1S
source
2S
source
3S
source
4G
gate
mb D
mounting base; connected
to drain
1234
LFPAK56E; Power-
SO8 (SOT1023)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN3R9-100YSF
LFPAK56E;
Power-SO8
Description
plastic, single-ended surface-mounted package (LFPAK56);
4 leads; 1.27 mm pitch
Version
SOT1023
7. Marking
Table 4. Marking codes
Type number
PSMN3R9-100YSF
Marking code
3F9S10J
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
Ptot
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
Conditions
25 °C ≤ Tj ≤ 150 °C
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
Tmb = 25 °C; Fig. 1
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 245 W
PSMN3R9-100YSF
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
17 February 2020
© Nexperia B.V. 2020. All rights reserved
2 / 12



nexperia PSMN3R9-100YSF
Nexperia
PSMN3R9-100YSF
NextPower 100 V, 4.3 mΩ N-channel MOSFET in LFPAK56 package
Symbol
Parameter
Conditions
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering
temperature
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
ID = 55 A; Vsup ≤ 100 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
IAS non-repetitive avalanche Vsup = 100 V; VGS = 10 V; Tj(init) = 25 °C;
current
RGS = 50 Ω; Fig. 4
[1] Protected by 100% test
120
Pder
(%)
03aa17
150
ID
(A)
125
[1]
[1]
Min Max Unit
- 120 A
- 105 A
- 667 A
-55 150 °C
-55 150 °C
- 260 °C
- 120 A
- 667 A
- 310 mJ
- 55 A
aaa-029645
80 100
75
40 50
25
0
0 50 100 150 200
Tsp (°C)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
0
0 25 50 75 100 125 150 175
Tmb (°C)
VGS ≥ 10 V
Fig. 2. Continuous drain current as a function of
mounting base temperature
PSMN3R9-100YSF
Preliminary data sheet
All information provided in this document is subject to legal disclaimers.
17 February 2020
© Nexperia B.V. 2020. All rights reserved
3 / 12







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