N-channel MOSFET. PSMN6R0-25YLB Datasheet

PSMN6R0-25YLB MOSFET. Datasheet pdf. Equivalent

PSMN6R0-25YLB Datasheet
Recommendation PSMN6R0-25YLB Datasheet
Part PSMN6R0-25YLB
Description N-channel MOSFET
Feature PSMN6R0-25YLB; PSMN6R0-25YLB N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 .
Manufacture nexperia
Datasheet
Download PSMN6R0-25YLB Datasheet




nexperia PSMN6R0-25YLB
PSMN6R0-25YLB
N-channel 25 V 6.1 mlogic level MOSFET in LFPAK using
NextPower technology
Rev. 2 — 31 October 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High reliability Power SO8 package,
qualified to 175°C
Low parasitic inductance and
resistance
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
1.3 Applications
DC-to-DC converters
Load switching
Synchronous buck regulator
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state resistance
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
Conditions
25 °C Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 4.5 V; ID = 20 A; Tj = 25 °C;
see Figure 12
VGS = 10 V; ID = 20 A; Tj = 25 °C;
see Figure 12
VGS = 4.5 V; ID = 20 A; VDS = 12 V;
see Figure 14; see Figure 15
Min Typ Max Unit
- - 25 V
- - 73 A
--
-55 -
58 W
175 °C
- 6.7 7.9 m
- 5.1 6.1 m
- 2.6 - nC
- 9 - nC



nexperia PSMN6R0-25YLB
Nexperia
PSMN6R0-25YLB
N-channel 25 V 6.1 mlogic level MOSFET in LFPAK using NextPower technology
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to drain
Simplified outline
mb
Graphic symbol
D
1234
SOT669 (LFPAK; Power-SO8)
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN6R0-25YLB
LFPAK;
Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
4. Limiting values
Version
SOT669
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 4
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2
MM (JEDEC JESD22-A115)
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 73 A;
Vsup 25 V; unclamped; RGS = 50 ;
see Figure 3
Min Max Unit
- 25 V
- 25 V
-20 20 V
- 73 A
- 52 A
- 292 A
- 58 W
-55 175 °C
-55 175 °C
- 260 °C
220 -
V
- 53 A
- 292 A
- 15 mJ
PSMN6R0-25YLB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 31 October 2011
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN6R0-25YLB
Nexperia
PSMN6R0-25YLB
N-channel 25 V 6.1 mlogic level MOSFET in LFPAK using NextPower technology
80
ID
(A)
60
003aag105
40
20
0
0 50 100 150 200
Tmb(°C)
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
102
IAL
(A)
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aag106
(1)
(2)
1
10-3
10-2
10-1
1 10
tAL (ms)
Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
PSMN6R0-25YLB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 31 October 2011
© Nexperia B.V. 2017. All rights reserved
3 of 15







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