N-channel MOSFET. PSMN4R3-80ES Datasheet

PSMN4R3-80ES MOSFET. Datasheet pdf. Equivalent

PSMN4R3-80ES Datasheet
Recommendation PSMN4R3-80ES Datasheet
Part PSMN4R3-80ES
Description N-channel MOSFET
Feature PSMN4R3-80ES; PSMN4R3-80ES N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK Rev. 02 — 18 April 2011 Produc.
Manufacture nexperia
Datasheet
Download PSMN4R3-80ES Datasheet




nexperia PSMN4R3-80ES
PSMN4R3-80ES
N-channel 80 V, 4.3 mstandard level MOSFET in I2PAK
Rev. 02 — 18 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
1.3 Applications
„ DC-to-DC converters
„ Load switch
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Static characteristics
RDSon
drain-source
on-state resistance
Dynamic characteristics
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 13
VGS = 10 V; ID = 25 A;
Tj = 100 °C; see Figure 12
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 75 A;
VDS = 40 V; see Figure 14;
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C;
ID = 120 A; Vsup 80 V;
RGS = 50 ; unclamped
Min Typ Max Unit
- - 80 V
[1] - - 120 A
- - 306 W
-55 -
175 °C
[2] -
[2] -
3.7 4.3 m
6.1 7.1 m
- 28 - nC
- 111 - nC
- - 676 mJ



nexperia PSMN4R3-80ES
Nexperia
PSMN4R3-80ES
N-channel 80 V, 4.3 mstandard level MOSFET in I2PAK
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT226 (I2PAK)
Table 3. Ordering information
Type number
Package
Name
PSMN4R3-80ES
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226
PSMN4R3-80ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 18 April 2011
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN4R3-80ES
Nexperia
PSMN4R3-80ES
N-channel 80 V, 4.3 mstandard level MOSFET in I2PAK
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup 80 V; RGS = 50 ; unclamped
Min
-
-
-20
[1] -
[1] -
-
-
-55
-55
-
[1] -
-
-
[1] Continuous current is limited by package.
Max Unit
80 V
80 V
20 V
120 A
120 A
688 A
306 W
175 °C
175 °C
260 °C
120 A
688 A
676 mJ
200
ID
(A)
160
120
80
40
(1)
003aaf630
120
Pder
(%)
80
40
03aa16
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN4R3-80ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 18 April 2011
© Nexperia B.V. 2017. All rights reserved
3 of 15







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