N-channel MOSFET. PSMN2R9-25YLC Datasheet

PSMN2R9-25YLC MOSFET. Datasheet pdf. Equivalent

PSMN2R9-25YLC Datasheet
Recommendation PSMN2R9-25YLC Datasheet
Part PSMN2R9-25YLC
Description N-channel MOSFET
Feature PSMN2R9-25YLC; PSMN2R9-25YLC N-channel 25 V 3.15 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1.
Manufacture nexperia
Datasheet
Download PSMN2R9-25YLC Datasheet




nexperia PSMN2R9-25YLC
PSMN2R9-25YLC
N-channel 25 V 3.15 mlogic level MOSFET in LFPAK using
NextPower technology
Rev. 1 — 2 May 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High reliability Power SO8 package,
qualified to 175°C
„ Low parasitic inductance and
resistance
„ Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
„ Ultra low QG, QGD and QOSS for high
system efficiencies at low and high
loads
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Power OR-ing
„ Server power supplies
„ Sync rectifier
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Ptot
Tj
Quick reference data
Parameter
drain-source
voltage
Conditions
25 °C Tj 175 °C
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
total power
dissipation
Tmb = 25 °C; see Figure 2
junction
temperature
Min Typ Max Unit
- - 25 V
[1] - - 100 A
- - 92 W
-55 -
175 °C



nexperia PSMN2R9-25YLC
Nexperia
PSMN2R9-25YLC
N-channel 25 V 3.15 mlogic level MOSFET in LFPAK using
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 4.5 V; ID = 25 A;
Tj = 25 °C;
see Figure 12
VGS = 10 V; ID = 25 A;
Tj = 25 °C;
see Figure 12
Dynamic characteristics
QGD
QG(tot)
gate-drain
charge
total gate
charge
VGS = 4.5 V; ID = 25 A;
VDS = 12 V;
see Figure 14; see Figure 15
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
- 3.45 4.1 m
- 2.65 3.15 m
- 4.4 - nC
- 16 - nC
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base;
connected to drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK;
Power-SO8)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN2R9-25YLC
LFPAK;
Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
4. Marking
Version
SOT669
Table 4. Marking codes
Type number
PSMN2R9-25YLC
[1] % = placeholder for manufacturing site code.
Marking code[1]
2C925L
PSMN2R9-25YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 May 2011
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN2R9-25YLC
Nexperia
PSMN2R9-25YLC
N-channel 25 V 3.15 mlogic level MOSFET in LFPAK using
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 4
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2
MM (JEDEC JESD22-A115)
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup 25 V; unclamped; RGS = 50 ;
see Figure 3
[1] Continuous current is limited by package.
Min
-
-
-20
[1] -
-
-
Max Unit
25 V
25 V
20 V
100 A
91 A
517 A
- 92 W
-55 175 °C
-55 175 °C
- 260 °C
380 -
V
- 83 A
- 517 A
- 47 mJ
PSMN2R9-25YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 May 2011
© Nexperia B.V. 2017. All rights reserved
3 of 15







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