N-channel MOSFET. PSMN3R0-30YL Datasheet

PSMN3R0-30YL MOSFET. Datasheet pdf. Equivalent

PSMN3R0-30YL Datasheet
Recommendation PSMN3R0-30YL Datasheet
Part PSMN3R0-30YL
Description N-channel MOSFET
Feature PSMN3R0-30YL; PSMN3R0-30YL N-channel 30 V 3 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 Product data.
Manufacture nexperia
Datasheet
Download PSMN3R0-30YL Datasheet




nexperia PSMN3R0-30YL
PSMN3R0-30YL
N-channel 30 V 3 mlogic level MOSFET in LFPAK
Rev. 04 — 10 March 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for logic level gate drive
sources
1.3 Applications
„ Class-D amplifiers
„ DC-to-DC converters
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power dissipation
Tj junction temperature
Static characteristics
Tmb = 25 °C; see Figure 2
RDSon
drain-source on-state
resistance
Dynamic characteristics
VGS = 10 V; ID = 15 A;
Tj = 25 °C
QGD
gate-drain charge
VGS = 4.5 V; ID = 10 A;
VDS = 12 V; see Figure 14;
see Figure 15
QG(tot)
total gate charge
Avalanche ruggedness
VGS = 4.5 V; ID = 10 A;
VDS = 12 V; see Figure 14
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C;
drain-source avalanche ID = 100 A; Vsup 30 V;
energy
RGS = 50 ; unclamped
Min Typ Max Unit
- - 30 V
[1] - - 100 A
--
-55 -
81 W
175 °C
- 2.19 3 m
- 5.1 - nC
- 21 - nC
- - 75 mJ
[1] Continuous current is limited by package.



nexperia PSMN3R0-30YL
Nexperia
PSMN3R0-30YL
N-channel 30 V 3 mlogic level MOSFET in LFPAK
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN3R0-30YL
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
PSMN3R0-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 10 March 2011
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN3R0-30YL
Nexperia
PSMN3R0-30YL
N-channel 30 V 3 mlogic level MOSFET in LFPAK
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDSM
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
peak drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Min
Tj 25 °C; Tj 175 °C
tp 25 ns; f 500 kHz; EDS(AL) 200 nJ;
pulsed
-
-
Tj 25 °C; Tj 175 °C; RGS = 20 k
-
-20
VGS = 10 V; Tmb = 100 °C; see Figure 1 [1] -
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 3
[1] -
-
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
-
-55
-55
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
[1] -
-
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup 30 V; RGS = 50 ; unclamped
-
[1] Continuous current is limited by package.
Max Unit
30 V
35 V
30 V
20 V
96 A
100 A
497 A
81 W
175 °C
175 °C
100 A
497 A
75 mJ
120
ID
(A)
100
80
60
40
20
0
0
003aac568
(1)
50 100 150 200
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN3R0-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 10 March 2011
© Nexperia B.V. 2017. All rights reserved
3 of 15





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