N-channel MOSFET. PSMN3R0-60BS Datasheet

PSMN3R0-60BS MOSFET. Datasheet pdf. Equivalent

PSMN3R0-60BS Datasheet
Recommendation PSMN3R0-60BS Datasheet
Part PSMN3R0-60BS
Description N-channel MOSFET
Feature PSMN3R0-60BS; PSMN3R0-60BS N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK Rev. 1 — 22 March 2012 Product .
Manufacture nexperia
Datasheet
Download PSMN3R0-60BS Datasheet




nexperia PSMN3R0-60BS
PSMN3R0-60BS
N-channel 60 V 3.2 mstandard level MOSFET in D2PAK
Rev. 1 — 22 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
Min
-
[1] -
-
-55
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
-
-
VGS = 10 V; ID = 25 A; VDS = 30 V;
see Figure 14; see Figure 15
-
-
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup 60 V; RGS = 50 ;
unclamped
-
[1] Continuous current is limited by package
Typ Max Unit
- 60 V
- 100 A
- 306 W
- 175 °C
4.32 5.1
2.7 3.2
m
m
28 -
130 -
nC
nC
- 800 mJ



nexperia PSMN3R0-60BS
Nexperia
PSMN3R0-60BS
N-channel 60 V 3.2 mstandard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain[1]
S source
D mounting base; connected to drain
Simplified outline
mb
2
13
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN3R0-60BS
D2PAK
4. Marking
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Table 4. Marking codes
Type number
PSMN3R0-60BS
Marking code
PSMN3R0-60BS
PSMN3R0-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© Nexperia B.V. 2017. All rights reserved
2 of 15



nexperia PSMN3R0-60BS
Nexperia
PSMN3R0-60BS
N-channel 60 V 3.2 mstandard level MOSFET in D2PAK
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup 60 V; RGS = 50 ; unclamped
[1] Continuous current is limited by package
Min
-
-
-20
[1] -
[1] -
-
-
-55
-55
-
[1] -
-
-
Max Unit
60 V
60 V
20 V
83.4 A
100 A
824 A
306 W
175 °C
175 °C
260 °C
100 A
824 A
800 mJ
120
ID
(A)
100
80
(1)
60
40
20
0
0 50
003aad672
100 150 200
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature.
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN3R0-60BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© Nexperia B.V. 2017. All rights reserved
3 of 15







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