N-channel MOSFET. PSMN7R0-30YL Datasheet

PSMN7R0-30YL MOSFET. Datasheet pdf. Equivalent

PSMN7R0-30YL Datasheet
Recommendation PSMN7R0-30YL Datasheet
Part PSMN7R0-30YL
Description N-channel MOSFET
Feature PSMN7R0-30YL; PSMN7R0-30YL N-channel 30 V 7 mΩ logic level MOSFET in LFPAK Rev. 04 — 9 March 2011 Product data .
Manufacture nexperia
Datasheet
Download PSMN7R0-30YL Datasheet




nexperia PSMN7R0-30YL
PSMN7R0-30YL
N-channel 30 V 7 mlogic level MOSFET in LFPAK
Rev. 04 — 9 March 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
Class-D amplifiers
DC-to-DC converter
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 15 A;
resistance
Tj = 25 °C
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 4.5 V; ID = 10 A;
VDS = 12 V; see Figure 14;
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C;
ID = 65 A; Vsup 30 V;
RGS = 50 ; unclamped
Min Typ Max Unit
- - 30 V
- - 76 A
- - 51 W
-55 -
175 °C
- 4.92 7 m
- 2.9 - nC
- 10 - nC
- - 21 mJ



nexperia PSMN7R0-30YL
Nexperia
PSMN7R0-30YL
N-channel 30 V 7 mlogic level MOSFET in LFPAK
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to
drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN7R0-30YL
LFPAK
4. Limiting values
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDSM
VDGR
VGS
ID
IDM
Parameter
drain-source voltage
peak drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
Conditions
Tj 25 °C; Tj 175 °C
tp 25 ns; f 500 kHz; EDS(AL) 90 nJ;
pulsed
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 3
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 65 A;
Vsup 30 V; RGS = 50 ; unclamped
Min Max Unit
- 30 V
- 35 V
- 30 V
-20 20 V
- 53 A
- 76 A
- 260 A
- 51 W
-55 175 °C
-55 175 °C
- 65 A
- 260 A
- 21 mJ
PSMN7R0-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 9 March 2011
© Nexperia B.V. 2017. All rights reserved
2 of 14



nexperia PSMN7R0-30YL
Nexperia
PSMN7R0-30YL
N-channel 30 V 7 mlogic level MOSFET in LFPAK
100
ID
(A)
80
60
40
20
0
0
003aac720
50 100 150 200
Tmb (°C)
120
Pder
(%)
80
03aa16
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
103
ID
(A)
102
Limit RDSon = VDS / ID
10
1
10-1
10-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac732
DC
10
10 μs
100 μs
1 ms
10 ms
100 ms
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN7R0-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 9 March 2011
© Nexperia B.V. 2017. All rights reserved
3 of 14







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