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MOSFET Driver. IXRFDSM607X2 Datasheet

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MOSFET Driver. IXRFDSM607X2 Datasheet






IXRFDSM607X2 Driver. Datasheet pdf. Equivalent




IXRFDSM607X2 Driver. Datasheet pdf. Equivalent





Part

IXRFDSM607X2

Description

15 A Low-Side RF MOSFET Driver

Manufacture

IXYS

Datasheet
Download IXRFDSM607X2 Datasheet


IXYS IXRFDSM607X2

IXRFDSM607X2; 15 A Low-Side RF MOSFET Driver IXRFDSM60 7X2 Description The IXRFDSM607X2 is a dual CMOS high-speed, high-current gat e driver specifically designed to drive MOSFETs in Class D and E HF RF applica tions as well as other applications req uiring ultrafast rise and fall times or short minimum pulse widths. The IXRFDS M607X2 can source and sink 7 A of peak current per driver.


IXYS IXRFDSM607X2

, 15 A when combined, while producing vo ltage rise and fall times of less than 5 ns and minimum pulse widths of 8 ns. The inputs of the driver are compatible with TTL or CMOS and are fully immune to latch up over the entire operating r ange. Designed with small internal dela ys, cross conduction or current shoot-t hrough is virtually eliminated. The fea tures and wide saf.


IXYS IXRFDSM607X2

ety margin in operating voltage and powe r make the IXRFDSM607X2 unmatched in pe rformance and value. The surface mount IXRFDSM607X2 is packaged in a low-induc tance surface mount package incorporati ng advanced layout techniques to minimi ze stray lead inductances .



Part

IXRFDSM607X2

Description

15 A Low-Side RF MOSFET Driver

Manufacture

IXYS

Datasheet
Download IXRFDSM607X2 Datasheet




 IXRFDSM607X2
15 A Low-Side RF MOSFET Driver IXRFDSM607X2
Description
The IXRFDSM607X2 is a dual CMOS high-speed,
high-current gate driver specifically designed to drive
MOSFETs in Class D and E HF RF applications as
well as other applications requiring ultrafast rise and
fall times or short minimum pulse widths. The
IXRFDSM607X2 can source and sink 7 A of peak cur-
rent per driver, 15 A when combined, while producing
voltage rise and fall times of less than 5 ns and mini-
mum pulse widths of 8 ns. The inputs of the driver are
compatible with TTL or CMOS and are fully immune to
latch up over the entire operating range. Designed
with small internal delays, cross conduction or current
shoot-through is virtually eliminated. The features and
wide safety margin in operating voltage and power
make the IXRFDSM607X2 unmatched in performance
and value.
The surface mount IXRFDSM607X2 is packaged in a
low-inductance surface mount package incorporating
advanced layout techniques to minimize stray lead in-
ductances for optimum switching performance. The
input and output pins can be separated or combined
for dual or single driver operation. However, both
sides are ground referenced together and cannot be
operated ground isolated from each other.
Features
High Peak Output Current
Low Output Impedance
Low Quiescent Supply Current
Low Propagation Delay
High Capacitive Load Drive Capability
Wide Operating Voltage Range
Single or Dual Driver Operation Capable
Applications
RF MOSFET Driver
Class D and E RF Generators
Multi-MHz Switch Mode Supplies
Pulse Transformer Driver
Pulse Laser Diode Driver
Pulse Generator
Fig. 1- Block Diagram and Truth Table
IN OUT
00
11
1





 IXRFDSM607X2
15 A Low-Side RF MOSFET Driver IXRFDSM607X2
Absolute Maximum Ratings
Parameter
Value
Supply Voltage VCC
Input Voltage Level VIN
All Other Pins
Power Dissipation
TA (AMBIENT) ≤ 25°C
TC (CASE) ≤ 25°C
Storage Temperature
30V
-5V to VCC + 0.3V
-0.3V to VCC +0.3V
2W
100W Note: 1
-40°C to 150°C
Soldering Lead Temperature
(10 seconds maximum)
300°C
Electrical Characteristics
Parameter
Maximum Junction Temperature
Operating Temperature Range
Thermal Impedance (Junction to Case) RӨJC
Moisture Sensitivity Level (MSL)
Value
150°C
-40°C to 85° C
0.25° C/W
1
Note: Operating the device outside of the Absolute Maximum Rat-
ingsmay cause permanent damage. Typical values indicate conditions
for which the device is intended to be functional but do not guarantee
specific performance limits. The guaranteed specifications apply only for
the test conditions listed. Exposure to absolute maximum conditions for
extended periods may impact device reliability.
Note: 1- Limited by high frequency performance, not package dissipa-
tion.
Unless otherwise noted, TA = 25° C, 8V < VCC < 30V.
All voltage measurements with respect to GND. IXRFDSM607X2 configured as described in Test Conditions with combined outputs.
Symbol Parameter
Test Conditions
Min Typ Max
Units
VIH
VIL
VHYS
VIN
IIN
VOH
VOL
ROH
ROL
IPEAK
IDC
tR
tF
High input voltage
Low input voltage
Input hysteresis
Input voltage range
Input current
High output voltage
Low output voltage
8V VCC 18V
8V VCC 18V
0VVIN VCC
High output resistance
VCC = 15V IOUT = 100mA
Low output resistance
Peak output current
Continuous output current
Rise time
Fall time
VCC = 15V IOUT = 100mA
VCC = 15V
Limited by package power dissipation
VCC=15V CL=1nF
CL=2nF
VCC =15V CL=1nF
CL=2nF
3.5
-5
-10
VCC - 0.025
0.25
0.42
0.22
15
2.5
4
5
4
5.5
0.8
VCC + 0.3
10
0.025
V
V
V
V
µA
V
V
Ω
Ω
A
A
ns
ns
ns
ns
tONDLY
tOFFDLY
PWmin
VCC
ICC
ON propagation delay
OFF propagation delay
Minimum pulse width
Power supply voltage
Power supply current
VCC =15V CL=2nF
VCC =15V CL=2nF
FWHM VCC =15V CL=1nF
Recommended
VCC = 15V, VIN = 0V
VCC = 15V, VIN = 3.5V
VCC = 15V, VIN = VCC
25 ns
22 ns
8 ns
8 15 18 V
0.4 1 mA
3.8 5 mA
0.4 1 mA
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and
assembling.
All specifications are subject to change at any time without notice.
2





 IXRFDSM607X2
*Outputs combined
Fig. 2
15 A Low-Side RF MOSFET Driver IXRFDSM607X2
Fig. 3
ROH
ROL
VIH
VIL
Fig. 4
Fig. 5
Fig. 6
CL = 4 nF
CL = 2 nF
CL = 1 nF
CL = 0 nF
Fig. 7
tONDLY
tOFFDLY
CL = 4 nF
CL = 2 nF
CL = 1 nF
CL = 0 nF
VIH = 3.5V
VIL = 0V
3



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