(PDF) 2N3904 Datasheet PDF | CDIL





2N3904 Datasheet PDF

Part Number 2N3904
Description NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS
Manufacture CDIL
Total Page 5 Pages
PDF Download Download 2N3904 Datasheet PDF

Features: Datasheet pdf Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company NPN SILICON PLANAR EPITAXIA L SWITCHING TRANSISTORS 2N3903 / 2N390 4 TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed w ith "T" EBC General Purpose Switching And Amplifier Applications ABSOLUTE M AXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage VCE O Collector Base Voltage VCBO Emitte r Base Voltage VEBO Collector Current Continuous IC Power Dissipation at T a=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Abo ve 25ºC Operating and Storage Junctio n Temperature Range Tj, Tstg THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j- a) VALUE 40 60 6.0 200 625 5.0 1.5 12 -55 to +150 83.3 200 ELECTRICAL CHARAC TERISTICS (Ta=25ºC unless specified ot herwise) DESCRIPTION SYMBOL TEST CON DITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Base Voltage VCBO IC=10µA. IE=0 E.

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2N3904 datasheet
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS
2N3903 / 2N3904
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
EBC
General Purpose Switching And Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation at Tc=25ºC
PD
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
Tj, Tstg
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Rth (j-c)
Rth (j-a)
VALUE
40
60
6.0
200
625
5.0
1.5
12
-55 to +150
83.3
200
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
Collector Base Voltage
VCBO
IC=10µA. IE=0
Emitter Base Voltage
VEBO
IE=10µA, IC=0
Base Cut Off Current
IBL VCE=30V, VEB=3V
Collector Cut Off Current
ICEX VCE=30V, VEB=3V
DC Current Gain
*hFE IC=0.1mA, VCE=1V
IC=1mA, VCE=1V
IC=10mA, VCE=1V
IC=50mA, VCE=1V
IC=100mA, VCE=1V
Collector Emitter Saturation Voltage *VCE (sat)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Base Emitter Saturation Voltage
*VBE (sat)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
2N3903 2N3904
>40 >40
>60 >60
>6.0
>6.0
< 50 < 50
< 50 < 50
>20 >40
>35 >70
50-150 100-300
>30 >60
>15 >30
< 0.2
< 0.2
< 0.3
< 0.3
0.65 - 0.85 0.65 - 0.85
< 0.95 < 0.95
*Pulse Condition: =300µs, Duty Cycle=2%
2N3903_3904Rev_1 240206E
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
nA
nA
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 5

2N3904 datasheet
NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS
2N3903 / 2N3904
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
EBC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
SMALL SIGNAL CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
Transistors Frequency
Output Capacitance
Input Capacitance
fT IC=10mA, VCE=20V, f=100MHz
Cob VCB=5V, IE=0, f=1MHz
Cib VEB=0.5V, IC=0, f=1MHz
2N3903
>250
< 4.0
< 8.0
2N3904
>300
<4.0
< 8.0
UNITS
MHz
pF
pF
Small Signal Current Gain
Input Inpedence
Voltage Feedback Ratio
Out put Adimttance
Noise Figure
SWITCHING Time
Delay time
Rise time
Storage time
Fall time
ALL f=1kHz
hfe
IC=1mA, VCE=10V
50 - 200 100 - 400
hie
IC=1mA, VCE=10V
1.0 - 8.0 1.0 -10
hre
IC=1mA, VCE=10V
0.1 - 5.0 0.5 - 8
hoe
IC=1mA, VCE=10V
1.0 - 40 1.0 - 40
NF IC=100µA, VCE=5V, f=1KHz, < 6.0
RS=1K
< 5.0
k
x10 -4
µmhos
dB
td VCC=3V, VBE=0.5V < 35 < 35 ns
tr
IC=10mA, IB1=1mA
< 35 < 35
ns
ts
VCC=3V, IC=10mA
< 175
< 200
ns
tf
IB1=1B2=1mA
< 50 < 50
ns
2N3903_3904Rev_1 030306E
Continental Device India Limited
Data Sheet
Page 2 of 5





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