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Schottky Rectifier. VF40100C-E3 Datasheet

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Schottky Rectifier. VF40100C-E3 Datasheet






VF40100C-E3 Rectifier. Datasheet pdf. Equivalent




VF40100C-E3 Rectifier. Datasheet pdf. Equivalent





Part

VF40100C-E3

Description

Dual High Voltage Trench MOS Barrier Schottky Rectifier



Feature


V40100C-E3, VF40100C-E3, VB40100C-E3, VI 40100C-E3 www.vishay.com Vishay Gener al Semiconductor Dual High Voltage Tre nch MOS Barrier Schottky Rectifier Ultr a Low VF = 0.38 V at IF = 5 A TO-220AB TMBS® ITO-220AB V40100C PIN 1 3 2 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF40100C PIN 1 123 PIN 2 PIN 3 T O-262AA K 2 1 VB40100C PIN 1 K PIN 2 HEATSINK DESIG.
Manufacture

Vishay

Datasheet
Download VF40100C-E3 Datasheet


Vishay VF40100C-E3

VF40100C-E3; N SUPPORT TOOLS VI40100C PIN 1 3 2 1 P IN 2 PIN 3 K click logo to get start ed Models Available PRIMARY CHARACTER ISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 x 20 A 100 V 250 A 0.61 V 150 °C TO-220AB, ITO-220AB, D2 PAK (TO-263AB), TO-262AA Circuit confi guration Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, l.


Vishay VF40100C-E3

ow power losses • High efficiency oper ation • Meets MSL level 1, per J-STD- 020, LF maximum peak of 245 °C (for TO -263AB package) • Low thermal resista nce • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for T O-220AB, ITO-220AB, .


Vishay VF40100C-E3

.

Part

VF40100C-E3

Description

Dual High Voltage Trench MOS Barrier Schottky Rectifier



Feature


V40100C-E3, VF40100C-E3, VB40100C-E3, VI 40100C-E3 www.vishay.com Vishay Gener al Semiconductor Dual High Voltage Tre nch MOS Barrier Schottky Rectifier Ultr a Low VF = 0.38 V at IF = 5 A TO-220AB TMBS® ITO-220AB V40100C PIN 1 3 2 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF40100C PIN 1 123 PIN 2 PIN 3 T O-262AA K 2 1 VB40100C PIN 1 K PIN 2 HEATSINK DESIG.
Manufacture

Vishay

Datasheet
Download VF40100C-E3 Datasheet




 VF40100C-E3
V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 5 A
TO-220AB
TMBS®
ITO-220AB
V40100C
PIN 1
3
2
1
PIN 2
PIN 3
CASE
D2PAK (TO-263AB)
K
VF40100C
PIN 1
123
PIN 2
PIN 3
TO-262AA
K
2
1
VB40100C
PIN 1
K
PIN 2
HEATSINK
DESIGN SUPPORT TOOLS
VI40100C
PIN 1
3
2
1
PIN 2
PIN 3
K
click logo to get started
Models
Available
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
Package
2 x 20 A
100 V
250 A
0.61 V
150 °C
TO-220AB, ITO-220AB,
D2PAK (TO-263AB), TO-262AA
Circuit configuration
Common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Low thermal resistance
• Solder bath temperature 275 °C maximum, 10 s, per JESD
22-B106 (for TO-220AB, ITO-220AB, and TO-262AA
package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V40100C VF40100C VB40100C VI40100C UNIT
Maximum repetitive peak reverse voltage
VRRM 100 V
Maximum average forward rectified current (fig. 1)
per device
per diode
IF(AV)
40
A
20
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
250 A
Non-repetitive avalanche energy at TJ = 25 °C, L = 90 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
EAS
IRRM
dV/dt
TJ, TSTG
230
1.0
10 000
-40 to +150
mJ
A
V/μs
°C
Revision: 19-Jun-2018
1 Document Number: 89042
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VF40100C-E3
V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Breakdown voltage (2)
Instantaneous forward voltage per diode (1)
IR = 1.0 mA
IR = 10 mA
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
Reverse current at rated VR per diode (2)
VR = 70 V
VR = 100 V
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF
IR
TYP.
100
(minimum)
105
(minimum)
0.47
0.54
0.67
0.38
0.45
0.61
9
10
-
21
MAX.
-
-
-
-
0.73
-
-
0.67
-
-
1000
45
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40100C
VF40100C
Typical thermal resistance per diode
RJC
2.0
4.0
VB40100C
2.0
VI40100C
2.0
UNIT
V
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V40100C-E3/4W
1.85
ITO-220AB
VF40100C-E3/4W
1.75
TO-263AB
VB40100C-E3/4W
1.39
TO-263AB
VB40100C-E3/8W
1.39
TO-262AA
VI40100C-E3/4W
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/tube
50/tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
50
VI40100C
40 VB40100C
V40100C
30 VF40100C
20
10
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
18
16
D = 0.8
14 D = 0.5
D = 0.3
12
10 D = 0.2
D = 1.0
8 D = 0.1
6
T
4
2
D = tp/T
tp
0
0 5 10 15 20 25
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 19-Jun-2018
2 Document Number: 89042
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




 VF40100C-E3
V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3
www.vishay.com
Vishay General Semiconductor
100
TA = 150 °C
10 TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2 0.4 0.6 0.8
Instantaneous Forward Voltage (V)
1
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
TA = 150 °C
10 TA = 125 °C
1
0.1
0.01
TA = 100 °C
TA = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
10
Junction to Case
1
0.1
0.01
V(I)40100C
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
100
Junction to Case
10
1
0.1
0.01
VF40100C
0.1 1 10
t - Pulse Duration (s)
100
Fig. 7 - Typical Transient Thermal Impedance Per Diode
1000
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 19-Jun-2018
3 Document Number: 89042
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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