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SCR. BT169D Datasheet

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SCR. BT169D Datasheet






BT169D SCR. Datasheet pdf. Equivalent




BT169D SCR. Datasheet pdf. Equivalent





Part

BT169D

Description

SCR



Feature


TO-92 BT169D SCR 19 March 2014 Product data sheet 1. General description Pla nar passivated Silicon Controlled Recti fier with sensitive gate in a SOT54 (TO -92) plastic package. This SCR is desig ned to be interfaced directly to microc ontrollers, logic ICs and other low pow er gate trigger circuits. 2. Features and benefits • Planar passivated for voltage ruggedness a.
Manufacture

NXP

Datasheet
Download BT169D Datasheet


NXP BT169D

BT169D; nd reliability • Sensitive gate • Di rect triggering from low power gate cir cuits and logic ICs 3. Applications Ignition circuits • Lighting ballas ts • Protection circuits • Switched Mode Power Supplies 4. Quick referenc e data Table 1. Quick reference data Symbol Parameter Conditions VDRM re petitive peak offstate voltage VRRM r epetitive peak reverse voltage.


NXP BT169D

ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state curren t tp = 10 ms; Fig. 4; Fig. 5 IT(AV) average on-state current half sine wav e; Tlead ≤ 83 °C; Fig. 1 IT(RMS) R MS on-state current half sine wave; Tle ad ≤ 83 .


NXP BT169D

.

Part

BT169D

Description

SCR



Feature


TO-92 BT169D SCR 19 March 2014 Product data sheet 1. General description Pla nar passivated Silicon Controlled Recti fier with sensitive gate in a SOT54 (TO -92) plastic package. This SCR is desig ned to be interfaced directly to microc ontrollers, logic ICs and other low pow er gate trigger circuits. 2. Features and benefits • Planar passivated for voltage ruggedness a.
Manufacture

NXP

Datasheet
Download BT169D Datasheet




 BT169D
BT169D
SCR
19 March 2014
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 (TO-92)
plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic
ICs and other low power gate trigger circuits.
2. Features and benefits
Planar passivated for voltage ruggedness and reliability
Sensitive gate
Direct triggering from low power gate circuits and logic ICs
3. Applications
Ignition circuits
Lighting ballasts
Protection circuits
Switched Mode Power Supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
VRRM
repetitive peak reverse
voltage
ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C;
state current
tp = 10 ms; Fig. 4; Fig. 5
IT(AV)
average on-state
current
half sine wave; Tlead ≤ 83 °C; Fig. 1
IT(RMS)
RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2;
Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 7
Min Typ Max Unit
- - 400 V
- - 400 V
- - 8A
- - 0.5 A
- - 0.8 A
- 50 200 µA
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 BT169D
NXP Semiconductors
BT169D
SCR
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 A anode
2 G gate
3 K cathode
Simplified outline
321
TO-92 (SOT54)
Graphic symbol
AK
G
sym037
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BT169D
TO-92
BT169D/01
TO-92
BT169D/DG
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
plastic single-ended leaded (through hole) package; 3 leads
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
SOT54
SOT54
7. Marking
Table 4. Marking codes
Type number
BT169D
BT169D/01
BT169D/DG
Marking code
BT169DH
BT169D
BT169DH
BT169D
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
2 / 13




 BT169D
NXP Semiconductors
BT169D
SCR
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
VRRM
repetitive peak reverse voltage
IT(AV)
average on-state current
half sine wave; Tlead ≤ 83 °C; Fig. 1
IT(RMS)
RMS on-state current
half sine wave; Tlead ≤ 83 °C; Fig. 2;
Fig. 3
ITSM non-repetitive peak on-state half sine wave; Tj(init) = 25 °C;
current
tp = 10 ms; Fig. 4; Fig. 5
half sine wave; Tj(init) = 25 °C;
tp = 8.3 ms
I2t I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IT = 2 A; IG = 10 mA; dIG/dt = 100 mA/
µs
IGM peak gate current
VRGM
peak reverse gate voltage
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 400 V
- 400 V
- 0.5 A
- 0.8 A
- 8A
- 9A
- 0.32 A2s
- 50 A/µs
- 1A
- 5V
- 2W
- 0.1 W
-40 150 °C
- 125 °C
0.8
Ptot
(W)
0.6
1.9
2.2
001aab446 77
a = 1.57
Tlead(max)
(°C)
89
2.8
0.4 4
0.2
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
0
0 0.1 0.2 0.3 0.4 0.5
IT(AV) (A)
α = conduction angle
a = form factor = IT(RMS) / IT(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
101
113
125
0.6
BT169D
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 March 2014
© NXP Semiconductors N.V. 2014. All rights reserved
3 / 13



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