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Effect Transistor. LPM2302 Datasheet

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Effect Transistor. LPM2302 Datasheet






LPM2302 Transistor. Datasheet pdf. Equivalent




LPM2302 Transistor. Datasheet pdf. Equivalent





Part

LPM2302

Description

N-Channel Enhancement Mode Field Effect Transistor



Feature


Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Fie ld Effect Transistor General Descripti on The LPM2302 is N-channel logic enhan cement mode power field effect transist or, which are produced by using high ce ll density, DMOS trench technology. Thi s high density process is especially ta ilored to minimize on-state resistance. These devices are.
Manufacture

Low Power Semi

Datasheet
Download LPM2302 Datasheet


Low Power Semi LPM2302

LPM2302; particularly suitable for low voltage a pplications, notebook computer power ma nagement and other battery powered circ uits where high-side switching are need ed. Ordering Information LPM2302- □ □ F: Pb-Free Package Type B3: SOT2 3-3 Features ■ 20V/3.5A, RDS(ON)=50m Ω(Typ.)@VGS=4.5V ■ 20V/3.0A, RDS(ON) =75mΩ(Typ.)@VGS=2.5V ■ Super high de nsity cell design for extremely .


Low Power Semi LPM2302

low RDS(ON) ■ SOT23 Package Applicati ons  Portable Media Players  Cell ular and Smart mobile phone  LCD  DSC Sensor  Wireless Card  Marki ng Information Device Marking LPM230 2B3F A2sHB Package SOT23-3 Shipping 3 K/REEL Pin .


Low Power Semi LPM2302

.

Part

LPM2302

Description

N-Channel Enhancement Mode Field Effect Transistor



Feature


Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Fie ld Effect Transistor General Descripti on The LPM2302 is N-channel logic enhan cement mode power field effect transist or, which are produced by using high ce ll density, DMOS trench technology. Thi s high density process is especially ta ilored to minimize on-state resistance. These devices are.
Manufacture

Low Power Semi

Datasheet
Download LPM2302 Datasheet




 LPM2302
Preliminary Datasheet
LPM2302
LPM2302 20V/3.5A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The LPM2302 is N-channel logic enhancement mode
power field effect transistor, which are produced by
using high cell density, DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suitable for low voltage
applications, notebook computer power management
and other battery powered circuits where high-side
switching are needed.
Ordering Information
LPM2302- □ □ □
F: Pb-Free
Package Type
B3: SOT23-3
Features
20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V
20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V
Super high density cell design for extremely low
RDS(ON)
SOT23 Package
Applications
Portable Media Players
Cellular and Smart mobile phone
LCD
DSC Sensor
Wireless Card
Marking Information
Device
Marking
LPM2302B3F A2sHB
Package
SOT23-3
Shipping
3K/REEL
Pin Configurations
(SOT-23)
TOP VIEW
D
G
DG
S
S
LPM2302 00 Jun.-2018
Email: marketing@lowpowersemi.com
www.lowpowersemi.com
Page 1 of 5




 LPM2302
Functional Pin Description
Name
G
S
D
Absolute Maximum Ratings
Preliminary Datasheet
Description
Gate Electrode
Source
Drain Electrode
LPM2302
Absolute Maximum Ratings TA=25Unless Otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
Pulsed Drain Current E
Power Dissipation
TA=25
TA=70
TA=25
TA=70
VDS 20
VGS ±12
ID 3.5
2.4
IDM 8
1.25
PO
0.8
V
V
A
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ. Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
t 10S
Steady-state
Steady-state
RθJA
RθJL
130 /W
160 /W
80 /W
LPM2302 00 Jun.-2018
Email: marketing@lowpowersemi.com
www.lowpowersemi.com
Page 2 of 5




 LPM2302
Preliminary Datasheet
LPM2302
Electrical Characteristics
Symbol
Parameter
STATIC PARAMETER
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero-Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body Leakage Current
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
gFS Forward Transconductance
VSD Diode Forward Voltage
DYNAMIC PARAMETERS
Ciss Input Capacitance
CDSS
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
t D(ON)
Turn-On Delay Time
tr Turn-On Rise Time
t D(OFF)
Turn-Off Delay Time
tf Turn-Off Fall Time
trr Body-Diode Reverse Recovery Time
Qrr Body-Diode Reverse Recovery Charge
Condition
Min.
ID=250μ AVGS=0V
VDS=16V,VGS=0V
TJ=55
VDS=0V,VGS=±12V
VDS=VGS,ID=250μA
VGS=4.5V, ID=3.5A
VGS=2.5V, ID=3A
VDS=5V,ID=3A
IS=1A,VGS=0V
20
0.4
VDS=10V,VGS=0V
f = 1MHz
VDS=0V,VGS=0V
f = 1MHz
VDS=10V,VGS=4.5V
ID=3.5A
VDS=10V,VGS=5V
RL=2.7Ω,RGEN=1Ω
IF=3A,d I/dt=100A/μS
IF=3A,d I/dt=100A/μS
Typ. Max. Units
V
1 μA
5
1 uA
0.7 1
V
50 mΩ
75 mΩ
12
0.75 1
S
V
330 pF
110 pF
30 pF
4Ω
4.2 nC
1 nC
0.5 nC
10 nS
8 nS
35 nS
10 nS
12.3 nS
2.5 nC
LPM2302 00 Jun.-2018
Email: marketing@lowpowersemi.com
www.lowpowersemi.com
Page 3 of 5



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