Transistor SMD. A2SHB Datasheet

A2SHB SMD. Datasheet pdf. Equivalent

Part A2SHB
Description N-Channel Enhancement Mode Field Effect Transistor SMD
Feature 3.7A, 20V N  N  N-Channel Enhancement Mode Field Effect Transistor SMD   Features  ■20V, 3.7A, R.
Manufacture HAOHAI
Datasheet
Download A2SHB Datasheet

SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOT-23 /SOT-23 Plasti A2SHB Datasheet
Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel E A2SHB Datasheet
3.7A, 20V N  N  N-Channel Enhancement Mode Field Effect A2SHB Datasheet
SOT-23 (SOT-23 Field Effect Transistors) GMS2302AL N-Chann A2SHB Datasheet
Recommendation Recommendation Datasheet A2SHB Datasheet




A2SHB
3.7A, 20V 贴片N沟道场效应管 产品参数规格书
 N沟道 增强型 场效应晶体管 片式表面贴封装
 N-Channel Enhancement Mode Field Effect Transistor SMD
  Features
 ■20V, 3.7A, RDS(ON)=50m@ VGS=4.5V
 ■High dense cell design for extremely low RDS(ON)
 ■Rugged and reliable
 ■Lead free product is acquired
 ■SOT-23 Package
 ■Marking Code: A2SHB
  Case Material: Molded Plastic.
  UL Flammability Classification Rating 94V-0
Internal Block Diagram
D
HNM2302ALBSOT-23
D
HNM2302ALB
N-Channel MOSFETs
HNM2302ALB
N-Channel
Enhancement Mode
Field Effect Transistor
对应其他工业型号
2302
SI2302
AO2302
GMS2302
元件标识(打印)
G
S
SOT-23 内部结构
S
G
SOT-23 管脚排列
DEVICE MARKING: A2SHB
 ■ MAXIMUM RATINGS 最大額定值
Characteristic 特性参数
Drain-Source Voltage 漏极-源极电压
Gate- Source Voltage 栅极-源极电压
Drain Current (continuous) 漏极电流-连续
Drain Current (pulsed) 漏极电流-脉冲
Symbol 符号
BVDSS
VGS
ID
IDM
Max 最大值
20
±8
3.7
12
Unit 单位
V
A
Total Device Dissipation 总耗散功率
TA=25(环境温度为25)
PD
1000
mW
Junction 结温
Storage Temperature 储存温度
Tj 150
Tstg -55 to +150
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
1页 共4
致力於中國功率器件優秀供應商
kkg@kkg.com.cn
HNM2302ALB_SOT-23



A2SHB
3.7A, 20V 贴片N沟道场效应管 产品参数规格书
HNM2302ALB
N-Channel MOSFETs
 ■ ELECTRICAL CHARACTERISTICS 电特性 (TA=25unless otherwise noted 如无特殊说明,温度为25)
Characteristic
特性参数
Symbol
符号
Min Typ Max
最小值 典型值 最大值
Unit
单位
Drain-Source Breakdown Voltage
漏极-源极击穿电压
Gate Threshold Voltage
栅极开启电压
ID=250μA, VGS=0V
ID=250μA, VGS=VDS
Drain-Source On Voltage
漏极-源极导通电压
ID=50mA, VGS=5V
ID=500mA, VGS=10V
Diode Forward Voltage Drop
内附二极管正向压降
IS=0.75A, VGS=0V
Zero Gate Voltage
Drain Current
零栅压漏极电流
Gate Body Leakage
栅极漏电流
Static Drain-Source
On-State Resistance
静态漏源导通电阻
VGS=0V, VDS=16V
VGS=0V,VDS=16V,TA=55
VGS=±8V, VDS=0V
ID=3.7A, VGS=4.5V
ID=2.0A, VGS=2.5V
BVDSS
VGS(th)
VDS(ON)
VSD
IDSS
IGSS
RDS(ON)
Input Capacitance 输入电容 VGS=0V, VDS=6V,f=1MHz
CISS
Common Source Output Capacitance
共源輸出電容
VGS=0V, VDS=6V,f=1MHz
Turn-ON Time 开启时间
VDS=6V, ID=1A, RGEN=6
COSS
t(on)
Turn-OFF Time 关断时间
VDS=6V, ID=1A, RGEN=6
Pulse Width<300μs; Duty Cycle<2.0%
t(off)
20
0.4
--
--
--
--
--
--
--
--
--
--
--
--
-- --
-- 1.5
-- 0.375 V
-- 3.75
-- 1.2
-- 1
μA
-- 10
--
±100
nA
-- 50
m
-- 70
-- 550
pF
-- 170
-- 20
nS
-- 65
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
2页 共4
致力於中國功率器件優秀供應商
kkg@kkg.com.cn
HNM2302ALB_SOT-23





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