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double diode. BAS299N3 Datasheet

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double diode. BAS299N3 Datasheet






BAS299N3 diode. Datasheet pdf. Equivalent




BAS299N3 diode. Datasheet pdf. Equivalent





Part

BAS299N3

Description

High-speed double diode



Feature


CYStech Electronics Corp. High –speed double diode BAS299N3 Spec. No. : C328 N3 Issued Date : 2017.04.05 Revised Dat e : Page No. : 1/7 Features • Small plastic SMD package • High switching speed: max. 4ns • Continuous reverse voltage: max. 100V • Repetitive peak reverse voltage: max. 110V • Repetiti ve peak forward current: max. 900mA. Pb-free package Equivalent Cir.
Manufacture

CYStech

Datasheet
Download BAS299N3 Datasheet


CYStech BAS299N3

BAS299N3; cuit BAS299N3 21 3 1:Anode 2:Cathode 3:Common connection Outline SOT-23 Common connection Anode Cathode Orde ring Information Device BAS299N3-0-T1- G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 30 00 pcs / Tape & Reel Environment frien dly grade : S for RoHS compliant produc ts, G for RoHS compliant and green comp ound products Packing sp.


CYStech BAS299N3

ec, T1 : 3000 pcs/ tape & reel in 7” r eel Product rank, zero for no rank prod ucts Product name BAS299N3 CYStek Pro duct Specification CYStech Electronics Corp. Absolute Maximum Ratings @TA=25 Spec. No. : C328N3 Issued Date : 20 17.04 .


CYStech BAS299N3

.

Part

BAS299N3

Description

High-speed double diode



Feature


CYStech Electronics Corp. High –speed double diode BAS299N3 Spec. No. : C328 N3 Issued Date : 2017.04.05 Revised Dat e : Page No. : 1/7 Features • Small plastic SMD package • High switching speed: max. 4ns • Continuous reverse voltage: max. 100V • Repetitive peak reverse voltage: max. 110V • Repetiti ve peak forward current: max. 900mA. Pb-free package Equivalent Cir.
Manufacture

CYStech

Datasheet
Download BAS299N3 Datasheet




 BAS299N3
CYStech Electronics Corp.
High –speed double diode
BAS299N3
Spec. No. : C328N3
Issued Date : 2017.04.05
Revised Date :
Page No. : 1/7
Features
Small plastic SMD package
High switching speed: max. 4ns
Continuous reverse voltage: max. 100V
Repetitive peak reverse voltage: max. 110V
Repetitive peak forward current: max. 900mA.
Pb-free package
Equivalent Circuit
BAS299N3
21
3
1Anode
2Cathode
3Common connection
Outline
SOT-23
Common connection
Anode
Cathode
Ordering Information
Device
BAS299N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs/ tape & reel in 7” reel
Product rank, zero for no rank products
Product name
BAS299N3
CYStek Product Specification




 BAS299N3
CYStech Electronics Corp.
Absolute Maximum Ratings @TA=25
Spec. No. : C328N3
Issued Date : 2017.04.05
Revised Date :
Page No. : 2/7
Parameters
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current(single diode loaded)
Continuous forward current(double diode loaded)
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125prior to surge t=1μs
t=1ms
t=1s
Total power dissipation(Note 1)
Junction Temperature
Storage Temperature
Note 1: Device mounted on an FR-4 PCB.
Symbol Min Max Unit
VRRM - 110 V
VR - 100 V
IF
-
-
430
250
mA
IFRM
900 mA
IFSM
-
-
8A
2A
- 1A
Ptot 250 mW
Tj - 150 °C
Tstg -65 +150 °C
Electrical Characteristics @ Tj=25unless otherwise specified
Parameters
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Forward recovery voltage
Symbol
Conditions
Min Typ. Max Unit
IF=1mA
IF=10mA
VF IF=50mA
IF=150mA
IF=300mA
VR=25V
IR
VR=100V
VR=25V,Tj=150
VR=100V,Tj=150
715 mV
855 mV
- - 1V
1.2 V
1.25 V
30 nA
-
-
1 μA
30 μA
50 μA
Cd VR=0V, f=1MHz
- - 3 pF
when switched from IF=10mA to
trr IR=10mA,RL=100, measured - - 4 ns
at IR=1mA
Vfr
when switched from IF=10mA
tr=20ns
-
- 1.75 V
Thermal Characteristics
Symbol
Rth,j-tp
Rth, j-a
Parameter
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Note 1: Device mounted on an FR-4 PCB.
BAS299N3
Conditions
Note 1
Value
360
500
Unit
/W
/W
CYStek Product Specification




 BAS299N3
CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C328N3
Issued Date : 2017.04.05
Revised Date :
Page No. : 3/7
Power Derating Curve
0.3
0.25
0.2
0.15
0.1
0.05
0
0 25 50 75 100 125 150 175
Ambient Temperature---TA(℃)
Reverse Leakage Current vs Reverse Voltage
100000
Tj=125°C
10000
1000
Tj=75℃
100 Tj=25℃
10 Tj=0°
1 Tj=-40°C
0.1
0
20 40 60 80
Reverse Voltage---VR(V)
100
10000
1000
Forward Current vs Forward Voltage
Pulse width=300μs,
1% Duty cycle
125℃
100
75°C
10
25°C
0℃
-40°C
1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Forward Voltage---VF(V)
Junction Capacitance vs Reverse Voltage
5
4
3
2
1
Tj=25℃, f=1.0MHz
0
0.1
1 10
Reverse Voltage---VR(V)
100
BAS299N3
CYStek Product Specification



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