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Mode MOSFET. BSS123KN3 Datasheet

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Mode MOSFET. BSS123KN3 Datasheet






BSS123KN3 MOSFET. Datasheet pdf. Equivalent




BSS123KN3 MOSFET. Datasheet pdf. Equivalent





Part

BSS123KN3

Description

N-Channel Enhancement Mode MOSFET



Feature


CYStech Electronics Corp. Spec. No. : C 134N3 Issued Date : 2016.07.20 Revised Date : 2016.12.07 Page No. : 1/9 N-Cha nnel Enhancement Mode MOSFET BSS123KN3 BVDSS ID@VGS=10V, TA=25°C RDS(ON)@V GS=10V, ID=120mA RDS(ON)@VGS=4.5V, ID= 100mA 100V 0.26A 2.13Ω(typ) 2.24Ω(ty p) Features • High ESD • High spee d switching • Pb-free lead plating an d halogen-free package • E.
Manufacture

CYStech

Datasheet
Download BSS123KN3 Datasheet


CYStech BSS123KN3

BSS123KN3; asily designed drive circuits • Low-vo ltage drive • Easy to use in parallel Symbol BSS123KN3 D G G:Gate S S:S ource D:Drain Outline SOT-23 D S G Ordering Information Device BSS123KN3 -0-T1-G Package SOT-23 (Pb-free lead p lating and halogen-free package) Shipp ing 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS complia.


CYStech BSS123KN3

nt and green compound products Packing s pec, T1 : 3000 pcs / tape & reel,7” r eel Product rank, zero for no rank prod ucts Product name BSS123KN3 CYStek Pr oduct Specification CYStech Electronic s Corp. Spec. No. : C134N3 Issued Date : 2 .


CYStech BSS123KN3

.

Part

BSS123KN3

Description

N-Channel Enhancement Mode MOSFET



Feature


CYStech Electronics Corp. Spec. No. : C 134N3 Issued Date : 2016.07.20 Revised Date : 2016.12.07 Page No. : 1/9 N-Cha nnel Enhancement Mode MOSFET BSS123KN3 BVDSS ID@VGS=10V, TA=25°C RDS(ON)@V GS=10V, ID=120mA RDS(ON)@VGS=4.5V, ID= 100mA 100V 0.26A 2.13Ω(typ) 2.24Ω(ty p) Features • High ESD • High spee d switching • Pb-free lead plating an d halogen-free package • E.
Manufacture

CYStech

Datasheet
Download BSS123KN3 Datasheet




 BSS123KN3
CYStech Electronics Corp.
Spec. No. : C134N3
Issued Date : 2016.07.20
Revised Date : 2016.12.07
Page No. : 1/9
N-Channel Enhancement Mode MOSFET
BSS123KN3
BVDSS
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=120mA
RDS(ON)@VGS=4.5V, ID=100mA
100V
0.26A
2.13Ω(typ)
2.24Ω(typ)
Features
• High ESD
• High speed switching
• Pb-free lead plating and halogen-free package
• Easily designed drive circuits
• Low-voltage drive
• Easy to use in parallel
Symbol
BSS123KN3
D
G
GGate
S SSource
DDrain
Outline
SOT-23
D
S
G
Ordering Information
Device
BSS123KN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
BSS123KN3
CYStek Product Specification




 BSS123KN3
CYStech Electronics Corp.
Spec. No. : C134N3
Issued Date : 2016.07.20
Revised Date : 2016.12.07
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Total Power Dissipation
ESD susceptibility
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VDSS
VGSS
ID
IDM
PD
VESD
Tj
Tstg
Limits
100
±20
260
208
1040
300
1200
-55~+150
-55~+150
*1
*2
*3
Unit
V
mA
mW
V
°C
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Ambient
Symbol
RθJA
Value
416 *2
Note : *1. Pulse Width 300μs, Duty cycle 2%
*2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch
*3. Human body model, 1.5kΩ in series with 100pF
Unit
°C/W
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ. Max.
Static
BVDSS*
VGS(th)
IGSS
IDSS
100
0.8
-
-
-
--
- 2.5
- ±10
-1
-5
RDS(ON)*
-
-
2.13 4.3
2.24 5.6
GFS 200 - -
Dynamic
Ciss - 37 56
Coss - 15.3 23
Crss - 2.6 5
*tr - 2.4 3.6
*td - 2.6 3.9
*tstg - 7 10.5
*tf - 4.4 6.6
*Qg - 1.86 2.8
*Qgs
- 0.31 0.47
*Qgd
- 0.42 0.63
Body Diode
*VSD
- 0.85 1.3
Unit
V
μA
Ω
mS
pF
ns
nC
V
Test Conditions
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±16V, VDS=0V
VDS=80V, VGS=0V
VDS=80V, VGS=0V, Tj=55°C
ID=120mA, VGS=10V
ID=100mA, VGS=4.5V
VDS=15V, ID=100mA
VDS=25V, VGS=0V, f=1MHz
VDS=50V, ID=0.26A, VGS=10V, RG=6Ω
VDS=80V, ID=0.26A, VGS=10V
IS=0.34A
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
BSS123KN3
CYStek Product Specification




 BSS123KN3
CYStech Electronics Corp.
Spec. No. : C134N3
Issued Date : 2016.07.20
Revised Date : 2016.12.07
Page No. : 3/9
Typical Characteristics
Typical Output Characteristics
1.0
0.9
0.8
0.7
0.6 10V,9V,8V,7V,6V,5V,4V,3.5V
0.5
0.4 3V
0.3
0.2 VGS=2.5V
0.1
0.0
0 1 2 3 4 5 6 7 8 9 10
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Junction Temperature
1.4
1.2
1
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
10
VGS=4.5V
1
0.01
VGS=10V
0.1
ID, Drain Current(A)
1
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
9
8 ID=120mA
7
6
5
4
3
2
1
0
0 24 68
VGS, Gate-Source Voltage(V)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
Tj=150°C
0.6
0.4
0.2
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
IDR, Reverse Drain Current(A)
1
Drain-Source On-State Resistance vs Junction Tempearture
2.4
VGS=10V, ID=120mA
2 RDS(ON)@Tj=25°C:2.13Ω typ.
1.6
1.2
0.8
VGS=4.5V, ID=100mA
0.4 RDS(ON)@Tj=25°C : 2.24Ω typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
BSS123KN3
CYStek Product Specification



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