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PNP Transistor. BTA1664L3 Datasheet

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PNP Transistor. BTA1664L3 Datasheet






BTA1664L3 Transistor. Datasheet pdf. Equivalent




BTA1664L3 Transistor. Datasheet pdf. Equivalent





Part

BTA1664L3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA1664L3 Spec. No. : C315L3 Issued Date : 2008. 03.14 Revised Date :2011.09.06 Page No. : 1/6 Features • Low VCE(sat), VCE( sat)=-0.24V (typical), at IC / IB =- 50 0mA /- 20mA • Pb-free lead plating an d halogen-free package Symbol BTA1664L 3 B:Base C:Collector E:Emitter O utline SOT-223 C E C B Abso.
Manufacture

CYStech

Datasheet
Download BTA1664L3 Datasheet


CYStech BTA1664L3

BTA1664L3; lute Maximum Ratings (Ta=25°C) Paramet er Symbol Limits Unit Collector-Bas e Voltage Collector-Emitter Voltage Emi tter-Base Voltage Collector Current(DC) Peak Collector Current Peak Base Curre nt Power Dissipation @TA=25℃ Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICM IBM Pd Tj Tstg -40 -2 5 -5 -2 -4 -200 3 (Note) 150 -55~+150 V V V A A mA W °C °C .


CYStech BTA1664L3

Note : The power which can be dissipate d assuming the device is mounted in a t ypical manner on a P.C.B. with copper e qual to 4 square inch minimum. BTA1664 L3 CYStek Product Specification CYSte ch Electronics Corp. Spec. No. : C315L 3 Issued D .


CYStech BTA1664L3

.

Part

BTA1664L3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA1664L3 Spec. No. : C315L3 Issued Date : 2008. 03.14 Revised Date :2011.09.06 Page No. : 1/6 Features • Low VCE(sat), VCE( sat)=-0.24V (typical), at IC / IB =- 50 0mA /- 20mA • Pb-free lead plating an d halogen-free package Symbol BTA1664L 3 B:Base C:Collector E:Emitter O utline SOT-223 C E C B Abso.
Manufacture

CYStech

Datasheet
Download BTA1664L3 Datasheet




 BTA1664L3
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTA1664L3
Spec. No. : C315L3
Issued Date : 2008.03.14
Revised Date :2011.09.06
Page No. : 1/6
Features
Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA
Pb-free lead plating and halogen-free package
Symbol
BTA1664L3
BBase
CCollector
EEmitter
Outline
SOT-223
C
E
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Peak Collector Current
Peak Base Current
Power Dissipation @TA=25
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICM
IBM
Pd
Tj
Tstg
-40
-25
-5
-2
-4
-200
3 (Note)
150
-55~+150
V
V
V
A
A
mA
W
°C
°C
Note : The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal
to 4 square inch minimum.
BTA1664L3
CYStek Product Specification




 BTA1664L3
CYStech Electronics Corp.
Spec. No. : C315L3
Issued Date : 2008.03.14
Revised Date :2011.09.06
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
Cob
Min.
-40
-25
-5
-
-
-
-0.5
120
40
-
-
Typ.
-
-
-
-
-
-0.24
-
-
-
120
19
Max.
-
-
-
-100
-100
-0.4
-0.8
390
-
-
-
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-40V, IE=0
VEB=-5V, IC=0
IC=-500mA, IB=-20mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-700mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Classification of hFE 1
Rank
Q
Range
120~270
R
180~390
Ordering Information
Device
BTA1664L3
Package
Shipping
Marking
SOT-223
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
A1664
Moisture Sensitivity Level : Conform to JEDEC Level 3
Recommended Storage Condition:
Temperature : 30 °C
Humidity : 60% RH
BTA1664L3
CYStek Product Specification




 BTA1664L3
CYStech Electronics Corp.
Spec. No. : C315L3
Issued Date : 2008.03.14
Revised Date :2011.09.06
Page No. : 3/6
Characteristic Curves
Current Gain vs Collector Current
1000
HFE
VCE=3V
Saturation Voltage vs Collector Current
1000
VCE(SAT)
100
VCE=1V
10
1
10000
10 100
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
100
10
1
1000
IC=25IB
IC=10IB
10 100
Collector Current---IC(mA)
On Voltage vs Collector Current
1000
1000
VBESAT@IC=10IB
100
1
10 100
Collector Current---IC(mA)
Power Derating Curve
3.5
3
2.5
2
1.5
1
0.5
0
0
50 100 150
Ambient Temperature---TA(℃)
1000
200
VBEON@VCE=1V
100
1
10 100
Collector Current---IC(mA)
1000
BTA1664L3
CYStek Product Specification



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