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PNP Transistor. BTA9012A3 Datasheet

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PNP Transistor. BTA9012A3 Datasheet






BTA9012A3 Transistor. Datasheet pdf. Equivalent




BTA9012A3 Transistor. Datasheet pdf. Equivalent





Part

BTA9012A3

Description

PNP Transistor



Feature


CYStech Electronics Corp. General Purpos e PNP Epitaxial Planar Transistor BTA90 12A3 Spec. No. : C305A3 Issued Date : 2014.02.17 Revised Date : 2014.03.11 Pa ge No. : 1/8 Description • The BTA90 12A3 is designed for using in driver st age of AF amplifier and general purpose amplification. • Large IC , IC Max . = -0.6A • Low VCE(sat), typically -0. 09V at IC/IB = -100mA / .
Manufacture

CYStech

Datasheet
Download BTA9012A3 Datasheet


CYStech BTA9012A3

BTA9012A3; -10mA. Ideal for low-voltage operation Pb-free lead plating and halogen-fre e package. Symbol BTA9012A3 Outline TO-92 B:Base C:Collector E:Emitt er E BC Ordering Information Device BTA9012A3-0-TB-G BTA9012A3-0-BK-G Pack age TO-92 (Pb-free lead plating and hal ogen-free package) TO-92 (Pb-free lead plating and halogen-free package) Ship ping 2000 pcs / Tape & Box.


CYStech BTA9012A3

1000 pcs/ bag, 10 bags/box, 10boxes/car ton Environment friendly grade : S for RoHS compliant products, G for RoHS co mpliant and green compound products Pac king spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/ carton Prod .


CYStech BTA9012A3

.

Part

BTA9012A3

Description

PNP Transistor



Feature


CYStech Electronics Corp. General Purpos e PNP Epitaxial Planar Transistor BTA90 12A3 Spec. No. : C305A3 Issued Date : 2014.02.17 Revised Date : 2014.03.11 Pa ge No. : 1/8 Description • The BTA90 12A3 is designed for using in driver st age of AF amplifier and general purpose amplification. • Large IC , IC Max . = -0.6A • Low VCE(sat), typically -0. 09V at IC/IB = -100mA / .
Manufacture

CYStech

Datasheet
Download BTA9012A3 Datasheet




 BTA9012A3
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
BTA9012A3
Spec. No. : C305A3
Issued Date : 2014.02.17
Revised Date : 2014.03.11
Page No. : 1/8
Description
The BTA9012A3 is designed for using in driver stage of AF amplifier and general purpose amplification.
Large IC , IC Max .= -0.6A
Low VCE(sat), typically -0.09V at IC/IB = -100mA / -10mA. Ideal for low-voltage operation
Pb-free lead plating and halogen-free package.
Symbol
BTA9012A3
Outline
TO-92
BBase
CCollector
EEmitter
E BC
Ordering Information
Device
BTA9012A3-0-TB-G
BTA9012A3-0-BK-G
Package
TO-92
(Pb-free lead plating and halogen-free package)
TO-92
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box,
10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTA9012A3
CYStek Product Specification




 BTA9012A3
CYStech Electronics Corp.
Spec. No. : C305A3
Issued Date : 2014.02.17
Revised Date : 2014.03.11
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
Limits
-80
-60
-7
-0.6
625
200
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*VBE(on)
hFE 1
hFE 2
fT
Cob
Min.
-80
-60
-7
-
-
-
-
-
144
20
200
-
Typ.
-
-
-
-
-
-0.09
-0.83
-0.76
-
-
-
4.5
Max.
-
-
-
-0.1
-0.1
-0.2
-1.2
-1.0
246
-
-
8.5
Unit
V
V
V
μA
μA
V
V
V
-
-
MHz
pF
Test Conditions
IC=-100μA
IC=-1mA
IE=-100μA
VCB=-80V, IE=0
VEB=-7V, IC=0
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
BTA9012A3
CYStek Product Specification




 BTA9012A3
CYStech Electronics Corp.
Spec. No. : C305A3
Issued Date : 2014.02.17
Revised Date : 2014.03.11
Page No. : 3/8
Typical Characteristics
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
-IB=100uA
1 234 5
-VCE, Collector-to-Emitter Voltage(V)
6
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
-IB=500uA
12 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
20mA
10mA
6mA
4mA
-IB=2mA
12 34 5
-VCE, Collector-to-Emitter Voltage(V)
6
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
50mA
25mA
20mA
10mA
-IB=5mA
12 345
-VCE, Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
1000
Tj=75°C
Tj=125°C
Current Gain vs Collector Current
1000
Tj=75°C
Tj=125°C
100
Tj=25°C Tj=0°C
Tj=-40°C
10
1
-VCE=1V
10 100
-IC, Collector Current(mA)
100
1000
Tj=25°C
Tj=0°C
Tj=-40°C
10
1
-VCE=2V
10 100
-IC, Collector Current(mA)
1000
BTA9012A3
CYStek Product Specification



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