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PNP Transistor. BTB1236AI3 Datasheet

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PNP Transistor. BTB1236AI3 Datasheet






BTB1236AI3 Transistor. Datasheet pdf. Equivalent




BTB1236AI3 Transistor. Datasheet pdf. Equivalent





Part

BTB1236AI3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Silicon PNP Ep itaxial Planar Transistor BTB1236AI3 S pec. No. : C315I3 Issued Date : 2012.01 .16 Revised Date : 2017.12.08 Page No. : 1/5 Description • High BVCEO • H igh current capability • Complementar y to BTD1857AI3 • RoHS compliant pack age • Pb-free lead plating and haloge n-free package Symbol BTB1236AI3 Outl ine TO-251 B:Base C:Collect.
Manufacture

CYStech

Datasheet
Download BTB1236AI3 Datasheet


CYStech BTB1236AI3

BTB1236AI3; or E:Emitter BCE Ordering Informatio n Device BTB1236AI3-0-UA-G Package TO -251 (Pb-free lead plating and halogen- free package) Shipping 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound produ cts Packing spec,UA : 80 pcs / tube, 50 tubes/box Product rank, zero for no ra nk products Product .


CYStech BTB1236AI3

name BTB1236AI3 CYStek Product Specifi cation CYStech Electronics Corp. Spec . No. : C315I3 Issued Date : 2012.01.16 Revised Date : 2017.12.08 Page No. : 2 /5 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Co llector-E .


CYStech BTB1236AI3

.

Part

BTB1236AI3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Silicon PNP Ep itaxial Planar Transistor BTB1236AI3 S pec. No. : C315I3 Issued Date : 2012.01 .16 Revised Date : 2017.12.08 Page No. : 1/5 Description • High BVCEO • H igh current capability • Complementar y to BTD1857AI3 • RoHS compliant pack age • Pb-free lead plating and haloge n-free package Symbol BTB1236AI3 Outl ine TO-251 B:Base C:Collect.
Manufacture

CYStech

Datasheet
Download BTB1236AI3 Datasheet




 BTB1236AI3
CYStech Electronics Corp.
Silicon PNP Epitaxial Planar Transistor
BTB1236AI3
Spec. No. : C315I3
Issued Date : 2012.01.16
Revised Date : 2017.12.08
Page No. : 1/5
Description
High BVCEO
High current capability
Complementary to BTD1857AI3
RoHS compliant package
Pb-free lead plating and halogen-free package
Symbol
BTB1236AI3
Outline
TO-251
BBase
CCollector
EEmitter
BCE
Ordering Information
Device
BTB1236AI3-0-UA-G
Package
TO-251
(Pb-free lead plating and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec,UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
BTB1236AI3
CYStek Product Specification




 BTB1236AI3
CYStech Electronics Corp.
Spec. No. : C315I3
Issued Date : 2012.01.16
Revised Date : 2017.12.08
Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
TA=25°C
TC=25°C
Operating Junction Temperature Range
Storage Temperature Range
Note : Single Pulse Pw350μs, Duty2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
Limits
-180
-160
-5
-1.5
-3 (Note)
1
10
-55~+150
-55~+150
Unit
V
V
V
A
A
W
W
°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
125
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
hFE1
hFE2
fT
Cob
Min.
-180
-160
-5
-
-
-
-
180
80
-
-
Typ.
-
-
-
-
-
-
-
-
-
180
24
Max.
-
-
-
-1
-1
-0.6
-1.5
390
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-160V, IE=0
VEB=-4V, IC=0
IC=-1A, IB=-100mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-150mA
VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
BTB1236AI3
CYStek Product Specification




 BTB1236AI3
CYStech Electronics Corp.
Spec. No. : C315I3
Issued Date : 2012.01.16
Revised Date : 2017.12.08
Page No. : 3/5
Typical Characteristics
Current Gain vs Collector Current
1000
VCE=5V
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
100
10
1
1
10000
10 100 1000
Collector Current---IC(mA)
On Voltage vs Collector Current
VBE(ON)@VCE=5V
10000
1000
100
1
12
10
8
6
4
2
0
0
BTB1236AI3
10 100 1000
Collector Current---IC(mA)
Power Derating Curve
10000
50 100 150
Case Temperature---TC(℃)
200
10
1
1.2
1
0.8
0.6
0.4
0.2
0
0
10 100 1000
Collector Current---IC(mA)
Power Derating Curve
10000
50 100 150
Ambient Temperature---TA(℃)
200
Safe Operating Area
10
IC(max) (pulsed)
PT=1ms
1
IC(max)
(continuous)
PT=100ms
0.1
PT=1s
0.01
1
10 100
Forward Voltage---VCE(V)
1000
CYStek Product Specification



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