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PNP Transistor. BTB1424A3 Datasheet

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PNP Transistor. BTB1424A3 Datasheet






BTB1424A3 Transistor. Datasheet pdf. Equivalent




BTB1424A3 Transistor. Datasheet pdf. Equivalent





Part

BTB1424A3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1424A3 Spec. No. : C817A3-R Issued Date : 200 6.05.30 Revised Date:2008.04.24 Page:1/ 5 Features • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A • Exc ellent current gain characteristics • Complementary to BTD2150A3 • Pb-free package Symbol BTB1424A3 Outline TO- 92 B:Base C:Collector E:E.
Manufacture

CYStech

Datasheet
Download BTB1424A3 Datasheet


CYStech BTB1424A3

BTB1424A3; mitter Absolute Maximum Ratings (Ta=25 C) Parameter Collector-Base Voltage C ollector-Emitter Voltage Emitter-Base V oltage Collector Current Power Dissipat ion Junction Temperature Storage Temper ature Note : Single Pulse Pw≦350μs, Duty≦2%. Symbol VCBO VCEO VEBO IC(DC ) IC(pulse) Pd Tj Tstg BTB1424A3 ECB Limit -50 -50 -5 -3 -7 (Note) 750 150 -55~+150 Unit V V V A A.


CYStech BTB1424A3

mW °C °C CYStek Product Specificatio n CYStech Electronics Corp. Spec. No. : C817A3-R Issued Date : 2006.05.30 Re vised Date:2008.04.24 Page:2/5 Charact eristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *h FE1 * .


CYStech BTB1424A3

.

Part

BTB1424A3

Description

PNP Transistor



Feature


CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB1424A3 Spec. No. : C817A3-R Issued Date : 200 6.05.30 Revised Date:2008.04.24 Page:1/ 5 Features • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A • Exc ellent current gain characteristics • Complementary to BTD2150A3 • Pb-free package Symbol BTB1424A3 Outline TO- 92 B:Base C:Collector E:E.
Manufacture

CYStech

Datasheet
Download BTB1424A3 Datasheet




 BTB1424A3
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1424A3
Spec. No. : C817A3-R
Issued Date : 2006.05.30
Revised Date:2008.04.24
Page:1/5
Features
Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A
Excellent current gain characteristics
Complementary to BTD2150A3
Pb-free package
Symbol
BTB1424A3
Outline
TO-92
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : Single Pulse Pw350μs, Duty2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
Pd
Tj
Tstg
BTB1424A3
ECB
Limit
-50
-50
-5
-3
-7 (Note)
750
150
-55~+150
Unit
V
V
V
A
A
mW
°C
°C
CYStek Product Specification




 BTB1424A3
CYStech Electronics Corp.
Spec. No. : C817A3-R
Issued Date : 2006.05.30
Revised Date:2008.04.24
Page:2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-50
-50
-5
-
-
-
-
52
180
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
-
80
55
Classification Of hFE2
Rank
Range
P
180~390
Max.
-
-
-
-1
-1
-0.5
-2
-
560
-
-
Unit
V
V
V
μA
μA
V
V
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-30V, IE=0
VEB=-3V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-500mA
VCE=-5V, IC=-0.1A, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
E
270~560
Characteristic Curves
Current gain vs Collector current
1000
VCE=5V
100 VCE=2V
VCE=1V
10
1 10 100 1000 10000
Collector current---IC(mA)
BTB1424A3
C-E saturation voltage vs Collector current
10000
1000
100 IC=40IB
10
IC=10IB
IC=20IB
1
1 10 100 1000
Collector current---IC(mA)
10000
CYStek Product Specification




 BTB1424A3
CYStech Electronics Corp.
Spec. No. : C817A3-R
Issued Date : 2006.05.30
Revised Date:2008.04.24
Page:3/5
Characteristic Curves(Cont.)
B-E saturation voltage vs Collector current
Power Derating Curve
10000
1000
IC=10IB
100
1
10 100 1000
Collector current---IC(mA)
10000
800
700
600
500
400
300
200
100
0
0
50 100 150
Ambient Temperature --- Ta(℃ )
200
Grounded Emitter Propagation Characteristics
10000
VCE = 2V
1000
100
10
1
0 200 400 600 800 1000 1200 1400
Base To Emitter Voltage---VBE(V)
Grounded Emitter Output Characteristics
3000
2500
2000
20mA
18mA
16mA
14mA
12mA
1500
1000
10mA
8mA
6mA
4mA
500 2mA
IB=0mA
0
0 12 3 45 6
Collector To Emitter Voltage---VCE(V)
Grounded Emitter Output Characteristics
4000
3500
3000
2500
50mA
4405mmAA
35mA
30mA
25mA
20mA
2000
15mA
1500
10mA
1000
5mA
500
0
0
IB=0mA
123456
Collector To Emitter Voltage---VCE(V)
BTB1424A3
CYStek Product Specification



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