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Schottky Diode. LSIC2SD065A08A Datasheet

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Schottky Diode. LSIC2SD065A08A Datasheet






LSIC2SD065A08A Diode. Datasheet pdf. Equivalent




LSIC2SD065A08A Diode. Datasheet pdf. Equivalent





Part

LSIC2SD065A08A

Description

GEN2 SiC Schottky Diode



Feature


GEN2 SiC Schottky Diode LSIC2SD065A08A, 650 V, 8 A, TO-220-2L LSIC2SD065A08A 65 0 V, 8 A SiC Schottky Barrier Diode Ro HS Pb Description This series of silic on carbide (SiC) Schottky diodes has ne g- SiC SchottklmiygaibxDliemiruoemvdeor espeerraetcinovgejruyncctuiorrnentet,mh pigehrastuurrgeeocfa1p7a5b°ilCit.yT, h aensdea diodes series are ideal for app lications where imp.
Manufacture

Littelfuse

Datasheet
Download LSIC2SD065A08A Datasheet


Littelfuse LSIC2SD065A08A

LSIC2SD065A08A; rovements in efficiency, reliability, an d thermal management are desired. Feat ures • AEC-Q101 qualified • Posit ive temperature coefficient for safe op eration and ease of paralleling • 17 5 °C maximum operating junction temper ature • Excellent surge capability • Extremely fast, temperature-indepe ndent switching behavior • Dramatica lly reduced switching losses co.


Littelfuse LSIC2SD065A08A

mpared to Si bipolar diodes Circuit Dia gram TO-220-2L Maximum Ratings Characte ristics Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Non-Repetitive Forward Surge C urrent Power Dissipation Operating Junc tion Temper .


Littelfuse LSIC2SD065A08A

.

Part

LSIC2SD065A08A

Description

GEN2 SiC Schottky Diode



Feature


GEN2 SiC Schottky Diode LSIC2SD065A08A, 650 V, 8 A, TO-220-2L LSIC2SD065A08A 65 0 V, 8 A SiC Schottky Barrier Diode Ro HS Pb Description This series of silic on carbide (SiC) Schottky diodes has ne g- SiC SchottklmiygaibxDliemiruoemvdeor espeerraetcinovgejruyncctuiorrnentet,mh pigehrastuurrgeeocfa1p7a5b°ilCit.yT, h aensdea diodes series are ideal for app lications where imp.
Manufacture

Littelfuse

Datasheet
Download LSIC2SD065A08A Datasheet




 LSIC2SD065A08A
GEN2 SiC Schottky Diode
LSIC2SD065A08A, 650 V, 8 A, TO-220-2L
LSIC2SD065A08A 650 V, 8 A SiC Schottky Barrier Diode
RoHS Pb
Description
This series of silicon carbide (SiC) Schottky diodes has neg-
SiC SchottklmiygaibxDliemiruoemvdeorespeerraetcinovgejruyncctuiorrnentet,mhpigehrastuurrgeeocfa1p7a5b°ilCit.yT, haensdea
diodes series are ideal for applications where improvements
in efficiency, reliability, and thermal management are desired.
Features
• AEC-Q101 qualified
• Positive temperature
coefficient for safe
operation and ease of
paralleling
• 175 °C maximum
operating junction
temperature
• Excellent surge capability
• Extremely fast,
temperature-independent
switching behavior
• Dramatically reduced
switching losses
compared to Si bipolar
diodes
Circuit Diagram TO-220-2L
Maximum Ratings
Characteristics
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Non-Repetitive Forward Surge Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
Soldering Temperature
Applications
• Boost diodes in PFC or
DC/DC stages
• Switch-mode power
supplies
• Uninterruptible power
supplies
Environmental
• Solar inverters
• Industrial motor drives
• EV charging stations
• Littelfuse “RoHS” logo = RoHS
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
• Littelfuse “Pb-free” logo = Pb
Pb-free lead plating
Symbol
VRRM
VR
IF
IFSM
PTot
TJ
TSTG
TSOLD
Conditions
-
TJ = 25 °C
TC = 25 °C
TC = 135 °C
TC = 150 °C
TC = 25 °C, TP = 10 ms, Half sine pulse
TC = 25 °C
TC = 110 °C
-
-
-
Value
650
650
23
10.7
8
40
88
38
-55 to 175
-55 to 150
260
Unit
V
V
A
A
W
°C
°C
°C
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/07/19




 LSIC2SD065A08A
GEN2 SiC Schottky Diode
LSIC2SD065A08A, 650 V, 8 A, TO-220-2L
Electrical Characteristics (TJ =25 °C unless otherwise specified)
Characteristics
Forward Voltage
Reverse Current
Total Capacitance
Symbol
VF
IR
C
Total Capacitive Charge
QC
SiCCoSndcithionosttky Diode Min.
IF = 8 A, TJ = 25 °C
IF = 8 A, TJ = 175 °C
VR = 650 V , TJ = 25 °C
VR = 650 V , TJ = 175 °C
VR = 1 V, f = 1 MHz
VR = 200 V, f = 1 MHz
VR = 400 V, f = 1 MHz
VR
VR = 400 V, Qc = C(V)dV
0
-
-
-
-
-
-
-
-
Value
Typ.
1.5
1.85
<1
15
415
56
41
29
Max.
1.8
-
50
-
-
-
-
-
Thermal Characteristics
Characteristics
Thermal Resistance
Symbol
RθJC
Value
1.7
Unit
V
μA
pF
nC
Unit
°C/W
Figure 1: Typical Foward Characteristics
8
7 TJ = 25 °C
TJ = 150 °C
6
TJ = 125 °C
TJ = 175 °C
5
4
3
2 TJ = -55 °C
1
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
Voltage (V)
Figure 2: Typical Reverse Characteristics
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/07/19




 LSIC2SD065A08A
GEN2 SiC Schottky Diode
LSIC2SD065A08A, 650 V, 8 A, TO-220-2L
Figure 3: P ower Derating
Figure 4: Current Derating
SiC Schottky Diode
Figure 5: Capacitance vs. Reverse Voltage
Figure 6: Capacitive Charge vs. Reverse Voltage
Figure 7: Stored Energy vs. Reverse Voltage
Figure 8: Transient Thermal Impedance
1E+0
0.5
0.3
1E-1 0.1
0.05
0.02
0.01
1E-2
Single
1E-3
1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+0
Pulse Width (s)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/07/19



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