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Planar Transistor. BTC2882J3 Datasheet

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Planar Transistor. BTC2882J3 Datasheet






BTC2882J3 Transistor. Datasheet pdf. Equivalent




BTC2882J3 Transistor. Datasheet pdf. Equivalent





Part

BTC2882J3

Description

General Purpose NPN Epitaxial Planar Transistor



Feature


CYStech Electronics Corp. General Purpo se NPN Epitaxial Planar Transistor BTC 2882J3 BVCEO IC RCESAT(MAX) Spec. N o. : C238J3 Issued Date : 2010.06.23 Re vised Date : 2011.03.08 Page No. : 1/6 200V 1A 0.6Ω Features • High breakd own voltage, BVCEO≥ 200V • Large co ntinuous collector current capability Low collector saturation voltage • Pb-free lead plating and hal.
Manufacture

CYStech

Datasheet
Download BTC2882J3 Datasheet


CYStech BTC2882J3

BTC2882J3; ogen-free package Symbol BTC2882J3 Out line TO-252(DPAK) B:Base C:Collec tor E:Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25 Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD Tj T.


CYStech BTC2882J3

stg Limits 250 200 7 1 200 1 10 150 -55 ~+150 Unit V V V A mA W W °C °C BTC 2882J3 CYStek Product Specification C YStech Electronics Corp. Spec. No. : C 238J3 Issued Date : 2010.06.23 Revised Date : 2011.03.08 Page No. : 2/6 Therm al .


CYStech BTC2882J3

.

Part

BTC2882J3

Description

General Purpose NPN Epitaxial Planar Transistor



Feature


CYStech Electronics Corp. General Purpo se NPN Epitaxial Planar Transistor BTC 2882J3 BVCEO IC RCESAT(MAX) Spec. N o. : C238J3 Issued Date : 2010.06.23 Re vised Date : 2011.03.08 Page No. : 1/6 200V 1A 0.6Ω Features • High breakd own voltage, BVCEO≥ 200V • Large co ntinuous collector current capability Low collector saturation voltage • Pb-free lead plating and hal.
Manufacture

CYStech

Datasheet
Download BTC2882J3 Datasheet




 BTC2882J3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC2882J3
BVCEO
IC
RCESAT(MAX)
Spec. No. : C238J3
Issued Date : 2010.06.23
Revised Date : 2011.03.08
Page No. : 1/6
200V
1A
0.6Ω
Features
High breakdown voltage, BVCEO200V
Large continuous collector current capability
Low collector saturation voltage
Pb-free lead plating and halogen-free package
Symbol
BTC2882J3
Outline
TO-252(DPAK)
BBase
CCollector
EEmitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @TA=25
Power Dissipation @TC=25
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
Tj
Tstg
Limits
250
200
7
1
200
1
10
150
-55~+150
Unit
V
V
V
A
mA
W
W
°C
°C
BTC2882J3
CYStek Product Specification




 BTC2882J3
CYStech Electronics Corp.
Spec. No. : C238J3
Issued Date : 2010.06.23
Revised Date : 2011.03.08
Page No. : 2/6
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
125
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
*hFE 4
fT
Cob
Min.
250
200
7
-
-
-
-
-
-
160
160
120
50
-
-
Typ.
-
-
-
-
-
0.2
0.3
0.93
0.68
-
-
-
-
120
-
Max.
-
-
-
100
100
0.3
0.5
1
0.8
-
400
-
-
-
30
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
-
MHz
pF
Test Conditions
IC=10μA
IC=10mA
IE=10μA
VCB=200V
VEB=6V
IC=500mA, IB=50mA
IC=700mA, IB=35mA
IC=500mA, IB=50mA
VCE=2V, IC=100mA
VCE=2V, IC=50mA
VCE=2V, IC=100mA
VCE=2V, IC=200mA
VCE=5V, IC=700mA
VCE=5V, IC=100mA
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
BTC2882J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Recommended soldering footprint
BTC2882J3
CYStek Product Specification




 BTC2882J3
CYStech Electronics Corp.
Spec. No. : C238J3
Issued Date : 2010.06.23
Revised Date : 2011.03.08
Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current
1000
Saturation Voltage vs Collector Current
1000
VCESAT
100
VCE=5V
100
VCE=2V
10
1
10 100
Collector Current---IC(mA)
10
1000 1
10000
Saturation Voltage vs Collector Current
1000
IC=20IB
IC=10IB
10 100
Collector Current---IC(mA)
1000
On Voltage vs Collector Current
1000
VBESAT@IC=10IB
VBEON@VCE=2V
100
1
1.2
1
0.8
0.6
0.4
0.2
0
0
10 100
Collector Current---IC(mA)
Power Derating Curve
1000
50 100 150
Ambient Temperature---TA(℃)
200
100
1
12
10
8
6
4
2
0
0
10 100
Collector Current---IC(mA)
Power Derating Curve
1000
50 100 150
Case Temperature---TC(℃)
200
BTC2882J3
CYStek Product Specification



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