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Planar Transistor. BTC2883J3 Datasheet

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Planar Transistor. BTC2883J3 Datasheet






BTC2883J3 Transistor. Datasheet pdf. Equivalent




BTC2883J3 Transistor. Datasheet pdf. Equivalent





Part

BTC2883J3

Description

General Purpose NPN Epitaxial Planar Transistor



Feature


CYStech Electronics Corp. General Purpo se NPN Epitaxial Planar Transistor BTC 2883J3 BVCEO IC RCESAT(MAX) Spec. N o. : C239J3 Issued Date : 2010.06.23 Re vised Date : 2011.03.08 Page No. : 1/6 240V 1.2A 0.6Ω Features • High brea kdown voltage, BVCEO≥ 240V • Large continuous collector current capability • Low collector saturation voltage Pb-free lead plating and h.
Manufacture

CYStech

Datasheet
Download BTC2883J3 Datasheet


CYStech BTC2883J3

BTC2883J3; alogen-free package Symbol BTC2883J3 O utline TO-252(DPAK) B:Base C:Coll ector E:Emitter B CE Absolute Maxim um Ratings (Ta=25°C) Parameter Collect or-Base Voltage Collector-Emitter Volta ge Emitter-Base Voltage Collector Curre nt Base Current Power Dissipation @TA=2 5℃ Power Dissipation @TC=25℃ Juncti on Temperature Storage Temperature Sym bol VCBO VCEO VEBO IC IB PD T.


CYStech BTC2883J3

j Tstg Limits 300 240 7 1.2 200 1 10 15 0 -55~+150 Unit V V V A mA W W °C °C BTC2883J3 CYStek Product Specificati on CYStech Electronics Corp. Spec. No . : C239J3 Issued Date : 2010.06.23 Rev ised Date : 2011.03.08 Page No. : 2/6 The .


CYStech BTC2883J3

.

Part

BTC2883J3

Description

General Purpose NPN Epitaxial Planar Transistor



Feature


CYStech Electronics Corp. General Purpo se NPN Epitaxial Planar Transistor BTC 2883J3 BVCEO IC RCESAT(MAX) Spec. N o. : C239J3 Issued Date : 2010.06.23 Re vised Date : 2011.03.08 Page No. : 1/6 240V 1.2A 0.6Ω Features • High brea kdown voltage, BVCEO≥ 240V • Large continuous collector current capability • Low collector saturation voltage Pb-free lead plating and h.
Manufacture

CYStech

Datasheet
Download BTC2883J3 Datasheet




 BTC2883J3
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC2883J3
BVCEO
IC
RCESAT(MAX)
Spec. No. : C239J3
Issued Date : 2010.06.23
Revised Date : 2011.03.08
Page No. : 1/6
240V
1.2A
0.6Ω
Features
High breakdown voltage, BVCEO240V
Large continuous collector current capability
Low collector saturation voltage
Pb-free lead plating and halogen-free package
Symbol
BTC2883J3
Outline
TO-252(DPAK)
BBase
CCollector
EEmitter
B CE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @TA=25
Power Dissipation @TC=25
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PD
Tj
Tstg
Limits
300
240
7
1.2
200
1
10
150
-55~+150
Unit
V
V
V
A
mA
W
W
°C
°C
BTC2883J3
CYStek Product Specification




 BTC2883J3
CYStech Electronics Corp.
Spec. No. : C239J3
Issued Date : 2010.06.23
Revised Date : 2011.03.08
Page No. : 2/6
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
125
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
*hFE 4
fT
Cob
Min.
300
240
7
-
-
-
-
-
-
160
160
120
50
-
-
Typ.
-
-
-
-
-
0.2
0.3
0.93
0.67
-
-
-
-
120
-
Max.
-
-
-
100
100
0.3
0.5
1
0.8
-
320
-
-
-
30
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
-
MHz
pF
Test Conditions
IC=10μA
IC=10mA
IE=10μA
VCB=300V
VEB=6V
IC=500mA, IB=50mA
IC=700mA, IB=35mA
IC=500mA, IB=50mA
VCE=2V, IC=100mA
VCE=2V, IC=50mA
VCE=2V, IC=100mA
VCE=2V, IC=200mA
VCE=5V, IC=700mA
VCE=5V, IC=100mA
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
BTC2883J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Recommended soldering footprint
BTC2883J3
CYStek Product Specification




 BTC2883J3
CYStech Electronics Corp.
Spec. No. : C239J3
Issued Date : 2010.06.23
Revised Date : 2011.03.08
Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current
1000
10000
Saturation Voltage vs Collector Current
VCESAT
100
10
1
VCE=5V
VCE=2V
1000
100
10 100
Collector Current---IC(mA)
10
1000 1
IC=20IB
IC=10IB
10 100
Collector Current---IC(mA)
1000
10000
Saturation Voltage vs Collector Current
On Voltage vs Collector Current
1000
1000
VBESAT@IC=10IB
VBEON@VCE=2V
100
1
1.2
1
0.8
0.6
0.4
0.2
0
0
10 100
Collector Current---IC(mA)
100
1000 1
Power Derating Curve
50 100 150
Ambient Temperature---TA(℃)
200
12
10
8
6
4
2
0
0
10 100
Collector Current---IC(mA)
Power Derating Curve
1000
50 100 150
Case Temperature---TC(℃)
200
BTC2883J3
CYStek Product Specification



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