H06N60F Datasheet (data sheet) PDF





H06N60F Datasheet, N-Channel Power Field Effect Transistor

H06N60F   H06N60F  

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HI-SINCERITY MICROELECTRONICS CORP. Spe c. No. : MOS200402 Issued Date : 2004.0 4.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel Power F ield Effect Transistor Description This high voltage MOSFET uses an advanced t ermination scheme to provide enhanced v oltage-blocking capability without degr atding performance over time. In additi on, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effi cient design also offers a drain-to-sou rce diode with a fast recovery time. De signed for high voltage, high speed swi tching applications in power supplies, converters and PWM motor

H06N60F Datasheet, N-Channel Power Field Effect Transistor

H06N60F   H06N60F  
controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operat ing areas are critical and offer additi onal and saafety margin against unexpec ted voltage transients. Features • Ro bust High Voltage Termination • Avala nc he Energy Specified • Source-to-Dr ain Diode Recovery Time Comparable to








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