MBR60040CT Datasheet (data sheet) PDF





MBR60040CT Datasheet, Silicon Power Schottky Diode

MBR60040CT   MBR60040CT  

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Silicon Power Schottky Diode Features High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR60020CT thru MBR60040CTR VRRM = 20 V - 40 V IF(AV) = 600 A Twin Tower Pac kage Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbo l Conditions MBR60020CT(R) MBR60030CT (R) MBR60035CT(R) MBR60040CT(R) Unit R epetitive peak reverse voltage RMS reve rse voltage DC blocking voltage Operati ng temperature Storage temperature VRR M VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 4 0 28 40 -55 to 150 -55 to 150 V

MBR60040CT Datasheet, Silicon Power Schottky Diode

MBR60040CT  
V V °C °C Electrical characteristics , at Tj = 25 °C, unless otherwise spec ified Parameter Symbol Conditions M BR60020CT(R) MBR60030CT(R) MBR60035CT(R ) MBR60040CT(R) Unit Average forward c urrent (per pkg) Peak forward surge cur rent (per leg) IF(AV) IFSM TC = 125 C tp = 8.3 ms, half sine Maximum forw ard voltage (per leg) VF Rev








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