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MBR60040CT

GeneSiC

Silicon Power Schottky Diode


Description
Silicon Power Schottky Diode Features High Surge Capability Types from 20 V to 40 V VRRM Not ESD Sensitive MBR60020CT thru MBR60040CTR VRRM = 20 V - 40 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR60020CT(R) MBR60030CT(R) MBR60035CT(...



GeneSiC

MBR60040CT

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