BAT46GW Datasheet (data sheet) PDF





BAT46GW Datasheet, 250mA Schottky barrier diode

BAT46GW   BAT46GW  

Search Keywords: BAT46GW, datasheet, pdf, nexperia, 250mA, Schottky, barrier, diode, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

BAT46GW 100 V, 250 mA Schottky barrier d iode 24 November 2016 Product data she et 1. General description Planar Schot tky barrier diode with an integrated gu ard ring for stress protection, encapsu lated in an SOD123 small Surface-Mounte d Device (SMD) plastic package. 2. Fea tures and benefits • Low forward volt age: VF ≤ 850 mV • Low leakage curr ent: IR ≤ 4 µA • Reverse voltage V R ≤ 100 V • Low capacitance • Sma ll SMD plastic package • AEC-Q101 qua lified 3. Applications • High-speed switching • Line termination • Volt age clamping • Reverse polarity prote ction 4. Quick reference data Table 1 . Quick reference data Symbol Parameter VR revers

BAT46GW Datasheet, 250mA Schottky barrier diode

BAT46GW   BAT46GW  
e voltage VF forward voltage IR revers e current Conditions Tj = 25 °C IF = 250 mA; tp ≤ 300 µs; δ ≤ 0.02 ; T j = 25 °C VR = 75 V; pulsed; Tj = 25 C Min Typ Max Unit - - 100 V - 710 85 0 mV - 1 4 µA Nexperia BAT46GW 100 V , 250 mA Schottky barrier diode 5. Pin ning information Table 2. Pinning infor mation Pin Symbol Description 1 K catho de[1] 2 A anode [1] The marking bar ind icates the cathode. Simplified outline 12 SOD123 Graphic symbol 1 2 sym001 6. Ordering information Table 3. Ord ering information Type number Package Name BAT46GW SOD123 Description Pl astic surface-mounted package; 2 leads Version SOD123 7. Marking Table 4. Ma rking codes Type number BAT46GW Markin g code G8 BAT46GW Product data sheet All information provided in this docume nt is subject to legal disclaimers. 24 November 2016 © Nexperia B.V. 2017. A ll rights reserved 2 / 13 Nexperia BA T46GW 100 V, 250 mA Schottky barrier di ode 8. Limiting values Table 5. Limit ing values In accordance with the Absol ute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VR rev erse voltage Tj = 25 °C IF forward c urrent IFSM non-repetitive peak tp < 10 ms; Tj(init) = 25 °C; square wave forward current Ptot total power diss ipation Tamb ≤ 25 °C [1] [2] Tj Tamb Tstg junction temperatur








@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)