PSMN1R3-30YL Datasheet (data sheet) PDF





PSMN1R3-30YL Datasheet, N-channel MOSFET

PSMN1R3-30YL   PSMN1R3-30YL  

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PSMN1R3-30YL N-channel 30 V 1.3 mΩ lo gic level MOSFET in LFPAK Rev. 02 — 25 June 2009 Product data sheet 1. Pr oduct profile 1.1 General description Logic level N-channel MOSFET in LFPAK p ackage qualified to 150 °C. This produ ct is designed and qualified for use in a wide range of industrial, communicat ions and domestic equipment. 1.2 Featu res and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching p ower convertors „ Improved mechanical and thermal characteristics „ LFPAK p rovides maximum power density in a Powe r SO8 package 1.3 Applications „ DC-t o-DC converters „ Lithium-ion batte

PSMN1R3-30YL Datasheet, N-channel MOSFET

PSMN1R3-30YL   PSMN1R3-30YL  
ry protection „ Load switching „ Moto r control „ Server power supplies 1.4 Quick reference data Table 1. Quick r eference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source vol tage Tj ≥ 25 °C; Tj ≤ 150 °C - - 30 V ID drain current Tmb = 25 °C; VGS = 10 V; [1] - - 100 A see Figure 1; Ptot total power dissipation Tmb = 2 5 °C; see Figure 2 - - 121 W Tj junc tion temperature Avalanche ruggedness -55 - 150 °C EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics VGS = 10 V; Tj(init) = 25 °C; ID = 100 A; Vsup ≤ 30 V; RGS = 50 Ω; unclamped - - 383 mJ QGD Q G(tot) gate-drain charge total gate ch arge VGS = 4.5 V; ID = 25 A; VDS = 12 V; see Figure 13; see Figure 14 - 9.3 - nC - 46.6 - nC Nexperia PSMN1R3-30Y L N-channel 30 V 1.3 mΩ logic level M OSFET in LFPAK Table 1. Quick referenc e …continued Symbol Parameter Condi tions Static characteristics RDSon d rain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figu re 12 VGS = 10 V; ID = 15 A; Tj = 25 ° C; see Figure 17 [1] Continuous curren t is limited by package. 2. Pinning in formation Min Typ Max Unit - - 1.8 m - 1.04 1.3 mΩ Table 2. Pinning inf ormation Pin Symbol Description 1S s ource 2S source 3S source 4G gate mb D mounting base; connected to dra








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