PSMN2R4-30YLD Datasheet (data sheet) PDF





PSMN2R4-30YLD Datasheet, N-channel MOSFET

PSMN2R4-30YLD   PSMN2R4-30YLD  

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PSMN2R4-30YLD N-channel 30 V, 2.4 mΩ l ogic level MOSFET in LFPAK56 using Nex tPowerS3 Technology 7 February 2014 P roduct data sheet 1. General descripti on Logic level gate drive N-channel enh ancement mode MOSFET in LFPAK56 package . NextPowerS3 portfolio utilising Nexpe ria’s unique “SchottkyPlus” techn ology delivers high efficiency, low spi king performance usually associated wit h MOSFETs with an integrated Schottky o r Schottky-like diode but without probl ematic high leakage current. NextPowerS 3 is particularly suited to high effici ency applications at high switching fre quencies. 2. Features and benefits • Ultra low QG, QGD and QOSS for hig

PSMN2R4-30YLD Datasheet, N-channel MOSFET

PSMN2R4-30YLD   PSMN2R4-30YLD  
h system efficiency, especially at highe r switching frequencies • Superfast s witching with soft-recovery; s-factor > 1 • Low spiking and ringing for low EMI designs • Unique “SchottkyPlus technology; Schottky-like performanc e with < 1µA leakage at 25 °C • Opt imised for 4.5 V gate drive • Low par asitic inductance and resistance • Hi gh reliability clip bonded and solder d ie attach Power SO8 package; no glue, n o wire bonds, qualified to 175 °C • Wave solderable; exposed leads for opti mal visual solder inspection 3. Applica tions • On-board DC-to-DC solutions f or server and telecommunications • Se condary-side synchronous rectification in telecommunication applications • V oltage regulator modules (VRM) • Poin t-of-Load (POL) modules • Power deliv ery for V-core, ASIC, DDR, GPU, VGA and system components • Brushed and brus hless motor control 4. Quick reference data Table 1. Symbol VDS ID Ptot Qui ck reference data Parameter Conditions drain-source voltage 25 °C ≤ Tj 175 °C drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 total power dissip ation Tmb = 25 °C; Fig. 1 Min Typ Max Unit - - 30 V [1] - - 100 A - - 106 W Nexperia PSMN2R4-30YLD N-channel 30 V , 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Tj junction temperature Static characteris








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