PSMN1R0-30YLD Datasheet (data sheet) PDF





PSMN1R0-30YLD Datasheet, N-channel MOSFET

PSMN1R0-30YLD   PSMN1R0-30YLD  

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PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 us ing NextPowerS3 Technology 14 December 2015 Product data sheet 1. General d escription 300 Amp Logic level gate dri ve N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “Schot tkyPlus” technology delivers high eff iciency, low spiking performance us

PSMN1R0-30YLD Datasheet, N-channel MOSFET

PSMN1R0-30YLD   PSMN1R0-30YLD  
ually associated with MOSFETs with an in tegrated Schottky or Schottky-like diod e but without problematic high leakage current. NextPowerS3 is particularly su ited to high efficiency applications at high switching frequencies. 2. Featur es and benefits • 300 Amp capability • Avalanche rated, 100 % tested at I( as) = 190 Amps • Ultra low QG, QGD an d QOSS for high system efficiency,








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