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PMXB120EPE

nexperia
Part Number PMXB120EPE
Manufacturer nexperia
Description P-Channel MOSFET
Published Jul 5, 2019
Detailed Description PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhance...
Datasheet PDF File PMXB120EPE PDF File

PMXB120EPE
PMXB120EPE

Overview
PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1.
General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection 1 kV HBM • Drain-source on-state resistance RDSon = 100 mΩ 3.
Applications • High-side load switch and charging switch for portable devices • Power management in battery driven portables ...


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