PBSS4160PAN Datasheet (data sheet) PDF





PBSS4160PAN Datasheet, 1A NPN/NPN low VCEsat (BISS) transistor

PBSS4160PAN   PBSS4160PAN  

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PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsa t (BISS) transistor 14 January 2013 P roduct data sheet 1. General descripti on NPN/NPN low VCEsat Breakthrough In S mall Signal (BISS) transistor in a lead less medium power DFN2020-6 (SOT1118) S urface-Mounted Device (SMD) plastic pac kage. NPN/PNP complement: PBSS4160PANP. PNP/PNP complement: PBSS5160PAP. 2. F eatures and benefits • Very

PBSS4160PAN Datasheet, 1A NPN/NPN low VCEsat (BISS) transistor

PBSS4160PAN   PBSS4160PAN  
low collector-emitter saturation voltage VCEsat • High collector current capa bility IC and ICM • High collector cu rrent gain hFE at high IC • Reduced P rinted-Circuit Board (PCB) requirements • High energy efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • Load switch • B attery-driven devices • Power managem ent • Charging circuits • Power switches (e.








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