1N2806B Datasheet (data sheet) PDF





1N2806B Datasheet, SILICON ZENER DIODES

1N2806B   1N2806B  

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1N2804B THRU 1N2846B SILICON ZENER DIODE S 50W, 6.8 THRU 200 VOLT 5% TOLERANCE T O-3 50 MIL CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N2804B series types are silicon Zener diodes manufactured in a hermetically sealed metal case, design ed for high reliability industrial appl ications. Also available in reverse pol arity connection (replace “B” suffi x with “RB” suffix in part number - ex. 1N2804RB). The typical lead diamet er is 50 mils. MARKING: FULL PART NUMBE R MAXIMUM RATINGS: (TC=75°C) Power Di ssipation Operating and Storage Junctio n Temperature Thermal Reistance SYMBOL PD TJ, Tstg ΘJC 50 -65 to +175 2

1N2806B Datasheet, SILICON ZENER DIODES

1N2806B  
.0 UNITS W °C °C/W ELECTRICAL CHARAC TERISTICS: (TC=30°C unless otherwise n oted) VF=1.5V MAX @ IF=10A (for all typ es) TYPE ZENER VOLTAGE VZ @ IZT TEST CURRENT MAXIMUM ZENER IMPEDANCE MAXI MUM REVERSE CURRENT MAXIMUM ZENER CURR ENT (TC=75°C MAX) TYPICAL TEMPERATURE COEFFICIENT MIN NOM MAX IZT ZZT @ IZ T ZZK @ IZK IR @ VR IZM ΘVZ V V V mA Ω Ω mA μA V mA %/°C 1N2804B 6.460 6.8 7.140 1850 0.2 70 5.0 150 4.5 1N2805B 7.125 7.5 7.875 1700 0.3 70 5.0 75 5.0 1N2806B 7.790 8.2 8.6 10 1500 0.4 70 5.0 50 5.4 1N2807B 8 .645 9.1 9.555 1370 0.5 70 5.0 25 6. 1 1N2808B 9.500 10 10.500 1200 0.6 80 5.0 10 6.7 1N2809B 10.450 11 11.55 0 1100 0.8 80 5.0 5.0 8.4 1N2810B 1 1.400 12 12.600 1000 1.0 80 5.0 5.0 9.1 1N2811B 12.350 13 13.650 960 1.1 80 5.0 5.0 9.9 1N2812B 13.300 14 14. 700 890 1.2 80 5.0 5.0 10.6 1N2813B 14.250 15 15.750 830 1.4 80 5.0 5.0 11.4 1N2814B 15.200 16 16.800 780 1. 6 80 5.0 5.0 12.2 1N2815B 16.150 17 17.850 740 1.8 80 5.0 5.0 13.0 1N28 16B 17.100 18 18.900 700 2.0 80 5.0 5.0 13.7 1N2817B 18.050 19 19.950 660 2.2 80 5.0 5.0 14.4 1N2818B 19.000 20 21.000 630 2.4 80 5.0 5.0 15.2 1 N2819B 20.900 22 23.100 570 2.5 80 5 .0 5.0 16.7 1N2820B 22.800 24 25.200 5 20 2.6 80 5.0 5.0 18.2 1N2821B 23.750 25 26.250 500 2.7








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