BAV99LT1G Datasheet (data sheet) PDF





BAV99LT1G Datasheet, Dual Series Switching Diode

BAV99LT1G   BAV99LT1G  

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MEI Lead Free RoHS Compliant Dual S eries Switching Diode • We declare th at the material of product compliance w ith RoHS requirements. • S- Prefix fo r Automotive and Other Applications Req uiring Unique Site and Control Change R equirements; AEC-Q101 Qualified and PPA P Capable. BAV99LT1G SBAV99LT1G SOT 23 DEVICE MARKING ORDERING INFORMATIO N Device BAV99LT1G SBAV99LT1G BAV99LT3 G SBAV99LT3G Marking Shipping A7 300 0 Tape & Reel A7 10000 Tape & Reel MA XIMUM RATINGS (EACH DIODE) Rating Rever se Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Curre nt (1) (averaged over any 20 ms p

BAV99LT1G Datasheet, Dual Series Switching Diode

BAV99LT1G   BAV99LT1G  
eriod) Repetitive Peak Forward Current N on–Repetitive Peak Forward Current t = 1.0 µ s t = 1.0 ms t = 1.0 S THERMA L CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board, (1) T A = 25°C Derate above 25°C Thermal Re sistance Junction to Ambient Total Devi ce Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal R esistance Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1 ANODE 3 CAHODE/ANODE 2 CATHODE Symbol VR IF I FM(surge) V RRM I F(AV) I FRM I FS M Value 70 215 500 70 715 450 2.0 1.0 0.5 Unit Vdc mAdc mAdc V mA mA A Symb ol PD R θJA PD R θJA T J , T stg Max 225 1.8 556 300 2.4 417 –65 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W C MEI Lead Free RoHS Compliant B AV99LT1G , SBAV99LT1G ELECTRICAL CHARA CTERISTICS (T A = 25°C unless otherwis e noted) (EACH DIODE) Characteristic Symbol Min OFF CHARACTERISTICS Revers e Breakdown Voltage(I (BR) = 100 µA) R everse Voltage Leakage Current (V R = 7 0 Vdc) (V R = 25 Vdc, T J = 150°C) (V R = 70 Vdc, T J = 150°C) Diode Capacit ance (V R = 0, f = 1.0 MHz) Forward Vol tage (I F = 1.0 mAdc) (I F = 10 mAdc) ( I F = 50 mAdc) (I F = 150 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, i R(REC) = 1 0 mAdc, R L = 100Ω ) (Figur








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