Switching Diode. MMBD4148 Datasheet

MMBD4148 Diode. Datasheet pdf. Equivalent

Part MMBD4148
Description Surface Mount Switching Diode
Feature MMBD4148 Surface Mount Switching Diode FEATURES ‧Fast Switching Speed ‧Surface Mount Package Ideal.
Manufacture Eris
Datasheet
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MMBD4148
MMBD4148
Surface Mount Switching Diode
FEATURES
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
3
3
CATHODE
1
ANODE
1
2
A
L
3
Top View
12
BS
VG
C
DH
K
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBD4148 = 5D, KA2
Symbol
VR
IF
IFM(surge)
Value
75
300
500
Symbol
PD
R JA
PD
R JA
TJ, Tstg
Max
325
1.8
556
300
2.4
417
– 55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 Adc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 10 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Symbol
V(BR)
IR
CT
VF
trr
J
Min
75
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
Max Unit
— Vdc
25 nAdc
5.0 Adc
4.0 pF
1.25 Vdc
4.0 ns
Revision: B01
www.eris.com.tw



MMBD4148
MMBD4148
Surface Mount Switching Diode
+10 V
820
2.0 k
100 µH
0.1 µF
IF
50 Output
Pulse
Generator
DUT
0.1 µF
tr tp
10%
t
50 Input
Sampling
Oscilloscopes
VR
90%
Input Signal
IF
trr t
IR IR(REC) = 1.0 mA
Output Pulse
(IF = IR = 10 mA; Measured
at IR(REC) = 1.0 mA)
100
10
1.0
0.1
0.2
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
TA = 85°C
TA = –40°C
10
1.0
TA = 150°C
TA = 125°C
TA = 25°C
0.4 0.6 0.8 1.0
VF, Forward Voltage (V)
Figure 2. Forward Voltage
1.2
0.1
0.01
0.001
0
TA = 85°C
TA = 55°C
TA = 25°C
10 20 30
VR, Reverse Voltage (V)
40
Figure 3. Leakage Current
50
0.68
0.64
0.60
0.56
0.52
0
2.0 4.0 6.0
VR, Reverse Voltage (V)
Figure 4. Capacitance
8.0
Revision: B01
www.eris.com.tw





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