TK290A60Y Datasheet (data sheet) PDF





TK290A60Y Datasheet, Silicon N-Channel MOSFET

TK290A60Y   TK290A60Y  

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MOSFETs Silicon N-Channel MOS (DTMOS) TK290A60Y TK290A60Y 1. Applications • Switching Voltage Regulators 2. Fea tures (1) Low drain-source on-resistanc e: RDS(ON) = 0.23 Ω (typ.) by using S uper Junction Structure : DTMOS (2) Eas y to control Gate switching (3) Enhance ment mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.45mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO -220SIS 4. Absolute Maximum Ratings (N ote) (Ta = 25  unless otherwise spec ified) Characteristics Symbol Rating Unit Drain-source voltage Gate-sourc e voltage Drain current (DC) Drain curr ent (DC) Drain current (pulsed) Power d issipation Single-pulse avalanche

TK290A60Y Datasheet, Silicon N-Channel MOSFET

TK290A60Y   TK290A60Y  
energy Single-pulse avalanche current R everse drain current (DC) Reverse drain current (pulsed) Channel temperature S torage temperature Isolation voltage (R MS) Mounting torque (Tc = 25 ) (Tc = 100 ) (Tc = 25 ) (Tc = 25 ) (t = 1.0 s) (Note 1) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID ID IDP PD EAS IAS IDR IDRP Tch Tstg VISO(RMS) TOR 600 ±30 11.5 7.3 46 35 114 3 11.5 46 150 -55 to 150 2000 0.6 V A A A W mJ A A   V Nm Note: Using continuously under heavy loads (e.g. the application of high temperatu re/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliabi lity significantly even if the operatin g conditions (i.e. operating temperatur e/current/voltage, etc.) are within the absolute maximum ratings. Please desig n the appropriate reliability upon revi ewing the Toshiba Semiconductor Reliabi lity Handbook ("Handling Precautions"/" Derating Concept and Methods") and indi vidual reliability data (i.e. reliabili ty test report and estimated failure ra te, etc). Start of commercial producti on 2016-12 ©2016 Toshiba Corporation 1 2016-11-15 Rev.2.0 5. Thermal Char acteristics Characteristics Channel-to- case thermal resistance Channel-to-ambi ent thermal resistance Note 1: Ensure that the channel temperature








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