TK290P60Y Datasheet (data sheet) PDF





TK290P60Y Datasheet, Silicon N-Channel MOSFET

TK290P60Y   TK290P60Y  

Search Keywords: TK290P60Y, datasheet, pdf, Toshiba, Silicon, N-Channel, MOSFET, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

MOSFETs Silicon N-Channel MOS (DTMOS) TK290P60Y TK290P60Y 1. Applications • Switching Voltage Regulators 2. Fea tures (1) Low drain-source on-resistanc e: RDS(ON) = 0.23 Ω (typ.) by using S uper Junction Structure : DTMOS (2) Eas y to control Gate switching (3) Enhance ment mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source D PAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specifie d) Characteristics Symbol Rating Un it Drain-source voltage VDSS 600 V G ate-source voltage VGSS ±30 Drain c urrent (DC) (Tc = 25 ) (Note 1) I D 11.5 A Drain current (DC) (Tc =

TK290P60Y Datasheet, Silicon N-Channel MOSFET

TK290P60Y   TK290P60Y  
100 ) (Note 1) ID 7.3 A Drain cu rrent (pulsed) (Tc = 25 ) (Note 1) IDP 46 A Power dissipation (Tc = 2 5 ) PD 100 W Single-pulse avalanch e energy (Note 2) EAS 114 mJ Single -pulse avalanche current IAS 3 A Reve rse drain current (DC) (Note 1) IDR 11.5 Reverse drain current (pulsed) ( Note 1) IDRP 46 A Channel temperatur e Tch 150  Storage temperature Ts tg -55 to 150  Note: Using conti nuously under heavy loads (e.g. the app lication of high temperature/current/vo ltage and the significant change in tem perature, etc.) may cause this product to decrease in the reliability signific antly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute max imum ratings. Please design the appropr iate reliability upon reviewing the Tos hiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Conc ept and Methods") and individual reliab ility data (i.e. reliability test repor t and estimated failure rate, etc). © 2016 Toshiba Corporation 1 Start of c ommercial production 2016-12 2016-11-15 Rev.2.0 5. Thermal Characteristics Ch aracteristics Channel-to-case thermal r esistance Channel-to-ambient thermal re sistance Note 1: Ensure that the channe l temperature does not exceed 150 . Note 2: VDD = 90 V, Tch =








@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)