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CUHS15S40

Schottky Barrier Diode

Description

Schottky Barrier Diode Silicon Epitaxial CUHS15S40 1. Applications High-Speed Switching 2. Packaging and Internal Circuit CUHS15S40 1: Cathode 2: Anode US2H 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 40 V Average rectified current IO (Note 1) 1.5 A Non...

Toshiba

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CUHS15S40 Schottky Barrier Diode - Toshiba

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