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PMZB350UPE

nexperia
Part Number PMZB350UPE
Manufacturer nexperia
Description P-channel MOSFET
Published Jul 28, 2019
Detailed Description PMZB350UPE 20 V, single P-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General descr...
Datasheet PDF File PMZB350UPE PDF File

PMZB350UPE
PMZB350UPE

Overview
PMZB350UPE 20 V, single P-channel Trench MOSFET 1 August 2012 Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • 1.
8 kV ESD protected 1.
3 Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-sou...


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