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TPN1R603PL

Toshiba
Part Number TPN1R603PL
Manufacturer Toshiba
Description Silicon N-channel MOSFET
Published Aug 7, 2019
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1R603PL 1. Applications • High-Efficiency DC-DC Converters • Switching Volta...
Datasheet PDF File TPN1R603PL PDF File

TPN1R603PL
TPN1R603PL

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1R603PL 1.
Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2.
Features (1) High-speed switching (2) Small gate charge: QSW = 11 nC (typ.
) (3) Small output charge: Qoss = 23 nC (typ.
) (4) Low drain-source on-resistance: RDS(ON) = 1.
2 mΩ (typ.
) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.
1 to 2.
1 V (VDS = 10 V, ID = 0.
3 mA) 3.
Packaging and Internal Circuit TPN1R603PL TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-08 2016-08-25 Rev.
1.
0 TPN1R603PL 4.
Absolute Maximum Rati...


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