ADT002 | NVE
Ultralow Power Rotation Sensors
ADT001/ADT002 Rotation Sensors
ADT00X-10E Ultralow Power Rotation Sensors
Features
• Tunneling Magnetoresistance (TMR) technology • Extremely low power (1.8 μA typ. at 2.4 V) • Precision digital quadrant outputs • Wide airgap tolerance • Operates with as little as 30 Oersteds of magnetic field • Integrated fault detection • 2.4 V to 5.5 V supply range • −40°C to +125°C operating range • Ultramini.
- ADT002 | NVE
- Ultralow Power Rotation Sensors
- ADT001/ADT002 Rotation Sensors
ADT00X-10E Ultralow Power Rotation Sensors
Features
• Tunneling Magn.
- ADT001/ADT002 Rotation Sensors
ADT00X-10E Ultralow Power Rotation Sensors
Features
• Tunneling Magnetoresistance (TMR) technology • Extremely low power (1.8 μA typ. at 2.4 V) • Precision digital quadrant outputs • Wide airgap tolerance • Operates with as little as 30 Oersteds of magnetic field • Integrated fault detection • 2.4 V to 5.5 V supply range • −40°C to +125°C operating range • Ultraminiature TDFN6 packages
tation
Functional Diagram a.
