DatasheetsPDF.com

CDBJSC10650-G

Comchip

Silicon Carbide Power Schottky Diode


Description
Silicon Carbide Power Schottky Diode CDBJSC10650-G Reverse Voltage: 650 V Forward Current: 10 A RoHS Device Features - Rated to 650V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit dia...



Comchip

CDBJSC10650-G

File Download Download CDBJSC10650-G Datasheet


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)