DatasheetsPDF.com

CDBJSC5650-G

Comchip

Silicon Carbide Power Schottky Diode


Description
Silicon Carbide Power Schottky Diode CDBJSC5650-G Reverse Voltage: 650 V Forward Current: 5 A RoHS Device Features - Rated to 650V at 5 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagra...



Comchip

CDBJSC5650-G

File Download Download CDBJSC5650-G Datasheet


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)