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CDBGBSC201200-G

Comchip

Dual Silicon Carbide Power Schottky Diode


Description
Dual Silicon Carbide Power Schottky Diode CDBGBSC201200-G Reverse Voltage: 1200V Forward Current: 20A RoHS Device Features - Rated to 1200 at 20 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF 0.244(6...



Comchip

CDBGBSC201200-G

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