MOSFET. 80R1K4P7 Datasheet

80R1K4P7 Datasheet PDF, Equivalent


Part Number

80R1K4P7

Description

MOSFET

Manufacture

Infineon

Total Page 13 Pages
PDF Download
Download 80R1K4P7 Datasheet PDF


80R1K4P7 Datasheet
IPA80R1K4P7
MOSFET
800VCoolMOSªP7PowerTransistor
Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V
superjunctiontechnologiesandcombinesbest-in-classperformancewith
stateoftheartease-of-use,resultingfromInfineon’sover18years
pioneeringsuperjunctiontechnologyinnovation.
Features
•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Fullyqualifiedacc.JEDECforIndustrialApplications
•Fullyoptimizedportfolio
Benefits
•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower
assemblycosts
•Easytodriveandtoparallel
•BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns
Potentialapplications
RecommendedforhardandsoftswitchingflybacktopologiesforLED
Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand
Industrialpower.AlsosuitableforPFCstageinConsumerapplications
andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj=25°C
800
V
RDS(on),max
1.4
Qg,typ
10
nC
ID 4 A
Eoss @ 500V
0.9
µJ
VGS(th),typ
3
V
ESD class (HBM) 2
-
Type/OrderingCode
IPA80R1K4P7
Package
PG-TO 220 FullPAK
Marking
80R1K4P7
PG-TO220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.1,2018-02-07

80R1K4P7 Datasheet
800VCoolMOSªP7PowerTransistor
IPA80R1K4P7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2 Rev.2.1,2018-02-07


Features Datasheet pdf IPA80R1K4P7 MOSFET 800VCoolMOSªP7Po werTransistor Thelatest800VCoolMOS P7seriessetsanewbenchmarkin80 0V superjunctiontechnologiesandcomb inesbest-in-classperformancewith sta teoftheartease-of-use,resultingfr omInfineon’sover18years pioneerin gsuperjunctiontechnologyinnovation. Features •Best-in-classFOMRDS(on) *Eoss;reducedQg,Ciss,andCoss • Best-in-classDPAKRDS(on) •Best-in -classV(GS)thof3VandsmallestV(GS )thvariationof±0.5V •Integrated ZenerDiodeESDprotection •Fullyqu alifiedacc.JEDECforIndustrialAppli cations •Fullyoptimizedportfolio B enefits •Best-in-classperformance Enablinghigherpowerdensitydesign s,BOMsavingsandlower assemblycosts •Easytodriveandtoparallel • BetterproductionyieldbyreducingESD relatedfailures •Lessproductioni ssuesandreducedfieldreturns •Eas ytoselectrightpartsforfinetuning ofdesigns Potentialapplications Recommendedforhardandsoftswitchingflybacktopologies.
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