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TPS1120Y

Texas Instruments
Part Number TPS1120Y
Manufacturer Texas Instruments
Description DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
Published Aug 19, 2019
Detailed Description TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.18 Ω at VGS = – 10 V D 3-V Compatible D...
Datasheet PDF File TPS1120Y PDF File

TPS1120Y
TPS1120Y

Overview
TPS1120, TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) .
.
.
0.
18 Ω at VGS = – 10 V D 3-V Compatible D Requires No External VCC D TTL and CMOS Compatible Inputs D VGS(th) = – 1.
5 V Max D ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 SLVS080A – MARCH 1994 – REVISED AUGUST 1995 D PACKAGE (TOP VIEW) 1SOURCE 1GATE 2SOURCE 2GATE 1 2 3 4 8 1DRAIN 7 1DRAIN 6 2DRAIN 5 2DRAIN description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOS™ process, for 3-V or 5-V power distribution in battery-powered systems.
With a maximum VGS(th) of – 1.
5 V and an IDSS of only 0.
5 µA, the T...


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