BFW11 Datasheet: N-CHANNEL SILICON FETS





BFW11 N-CHANNEL SILICON FETS Datasheet

Part Number BFW11
Description N-CHANNEL SILICON FETS
Manufacture COMSET
Total Page 3 Pages
PDF Download Download BFW11 Datasheet PDF

Features: BFW10 – BFW11 N CHANNEL SILICON FETS D ESCRIPTION : Symmetrical N-CHANNEL sili con planar epitaxial junction field-eff ect transistors in TO72 metal envelopes with the shield lead connected to the case. They are designed for broad band amplifiers (0 to 300 MHz). Their very l ow frequencies makes these devices very suitable for differencial amplifiers, electro-medical and nuclear detector pr eamplifiers. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VDS -VGSO VDGO IDS IG Ptot Tstg Tj Drain-Source Voltage Gat e-Source Voltage (Open Drain) Drain-Gat e Voltage (Open Source) Drain Current G ate Current Total Power Dissipation at Tamb = 25°C Storage Temperature Range Junction Temperature THERMAL CHARACTER ISTICS Symbol Ratings RthJA Thermal Resistance, junction-ambient Value 30 30 30 20 10 250 -65 to 175 175 Unit V V V mA mA mW °C °C Value 590 Unit K/W 19/08/2014 COMSET SEMICONDUCTORS 1/3 BFW10 – BFW11 ELECTRICAL CHARAC TERISTICS Tj = 25°C unless otherwise specified Symbol Ratings -IGSS.

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BFW10 – BFW11
N CHANNEL SILICON FETS
DESCRIPTION :
Symmetrical N-CHANNEL silicon planar epitaxial
junction field-effect transistors in TO72 metal
envelopes with the shield lead connected to the case.
They are designed for broad band amplifiers (0 to 300
MHz).
Their very low frequencies makes these devices very
suitable for differencial amplifiers, electro-medical and
nuclear detector preamplifiers.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VDS
-VGSO
VDGO
IDS
IG
Ptot
Tstg
Tj
Drain-Source Voltage
Gate-Source Voltage (Open Drain)
Drain-Gate Voltage (Open Source)
Drain Current
Gate Current
Total Power Dissipation at Tamb = 25°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJA
Thermal Resistance, junction-ambient
Value
30
30
30
20
10
250
-65 to 175
175
Unit
V
V
V
mA
mA
mW
°C
°C
Value
590
Unit
K/W
19/08/2014
COMSET SEMICONDUCTORS
1/3

        






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