TCK22913G Datasheet: Load Switch IC





TCK22913G Load Switch IC Datasheet

Part Number TCK22913G
Description Load Switch IC
Manufacture Toshiba
Total Page 12 Pages
PDF Download Download TCK22913G Datasheet PDF

Features: TOSHIBA CMOS Linear Integrated Circuit S ilicon Monolithic TCK2291xG TCK2291xG 2A Load Switch IC with True Reverse C urrent Blocking The TCK2291xG series i s Load Switch ICs for power management with True Reverse Current Blocking and Thermal Shutdown function featuring low switch on resistance, ultra low quiesc ent current, high output current and wi de input voltage operation from 1.1 to 5.5 V. Switch ON resistance is only 31 mΩ at 5.0 V, -0.15 A load conditions and output current is available on 2.0 A. And these feature a slew rate contro l driver and output auto-discharge func tion. This device is available in 0.4 m m pitch ultra small package WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm).Thus this dev ices is ideal for portable applications that require high-density board assemb ly such as cellular phone. Feature  True Reverse Current Blocking  Therm al Shutdown function  Output auto-di scharge (Option)  Under voltage lock out  Low ON resistance : RON = 31 mΩ (typ.) at VIN = 5.0 V, IOUT = -0.15.

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TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCK2291xG
TCK2291xG
2A Load Switch IC with True Reverse Current Blocking
The TCK2291xG series is Load Switch ICs for power management
with True Reverse Current Blocking and Thermal Shutdown function
featuring low switch on resistance, ultra low quiescent current, high
output current and wide input voltage operation from 1.1 to 5.5 V. Switch
ON resistance is only 31 mat 5.0 V, -0.15 A load conditions and output
current is available on 2.0 A. And these feature a slew rate control driver
and output auto-discharge function.
This device is available in 0.4 mm pitch ultra small package WCSP6E
(0.8 mm x 1.2 mm, t: 0.55 mm).Thus this devices is ideal for portable
applications that require high-density board assembly such as cellular
phone.
Feature
True Reverse Current Blocking
Thermal Shutdown function
Output auto-discharge (Option)
Under voltage lockout
Low ON resistance :
RON = 31 m(typ.) at VIN = 5.0 V, IOUT = -0.15 A
RON = 40 m(typ.) at VIN = 3.3 V, IOUT = -0.15 A
RON = 70 m(typ.) at VIN = 1.8 V, IOUT = -0.15 A
RON = 141 m(typ.) at VIN = 1.2 V, IOUT = -0.15 A
Low Quiescent Current: IQ = 11 μA (typ.) at IOUT = 0 mA
Low standby current: IQ(OFF) = 0.6 μA (typ.) at OFF state
Inrush current reduction circuitt
Pull down connection between Control and GND(Option)
Ultra small package : WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm)
WCSP6E
Weight: 1 mg (typ.)
© 2017
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2016-06
2017-10-18

                    
              






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