RECOVERY RECTIFIER. 1F6 Datasheet

1F6 RECTIFIER. Datasheet pdf. Equivalent


Part 1F6
Description FAST RECOVERY RECTIFIER
Feature RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1F1 THRU 1F7 FAST RECOVERY RECTIFIER VOLTAGE RANGE 5.
Manufacture Rectron Semiconductor
Datasheet
Download 1F6 Datasheet


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1F6 Datasheet
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1F6
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FAST RECOVERY RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
1F1
THRU
1F7
FEATURES
* Fast switching
* Low leakage
* Low forward voltage drop
* High current capability
* High currenf surge
* High reliability
R-1
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.19 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.787 (20.0)
MIN.
.025 (0.65)
.021 (0.55) DIA.
.126 (3.2)
.106 (2.7)
.787 (20.0)
MIN.
.102 (2.6)
DIA.
.091 (2.3)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TA = 25oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
IFSM
CJ
TJ, TSTG
1F1 1F2 1F3 1F4 1F5 1F6 1F7 UNITS
50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts
1.0 Amps
25
15
-65 to + 150
Amps
pF
0C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage TA = 25oC
Maximum Full Load Reverse Current Full Cycle Average,
.375” (9.5mm) lead length at TL = 55oC
Maximum Reverse Recovery Time (Note 1)
SYMBOL
1F1 1F2 1F3
1F4 1F5 1F6 1F7 UNITS
VF 1.3 Volts
5.0 uAmps
IR
100 uAmps
trr 150 250 500 nSec
NOTES : 1. Reverse Recovery Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts
2001-5



1F6
RATING AND CHARACTERISTIC CURVES ( 1F1 THRU 1F7 )
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
1.0
.8
.6
.4
Single Phase
Half Wave 60Hz
.2 Resistive or
Inductive Load
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( )
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
20
10
3.0 TJ = 25
1.0
0.3
0.1
Pulse Width=300uS
1% Duty Cycle
.03
.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
200
100
8.3ms Single Half Sine-Wave
(JEDED Method)
50
30
20
10
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
6
4
2 TJ = 50
1.0
.6
.4
.2 TJ = 25
.1
.06
.04
.02
.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE
200
100
50
NONINDUCTIVE
RECOVERY TIME CHARACTERISTIC
10
NONINDUCTIVE
+0.5A
trr
60
40
20
10
6
4
2
1
.1
TJ = 25
(+)
25 Vdc
(approx)
(-)
D.U.T
1
NON-
INDUCTIVE
(-)
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
(+)
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
.2 .4 1.0 2 4 10 20 40 100
REVERSE VOLTAGE, ( V )
0
-0.25A
-1.0A
1cm SET TIME BASE FOR
50/100 ns/cm
RECTRON







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