FDMQ8203 Datasheet: Dual N-Channel and Dual P-Channel Power MOSFET





FDMQ8203 Dual N-Channel and Dual P-Channel Power MOSFET Datasheet

Part Number FDMQ8203
Description Dual N-Channel and Dual P-Channel Power MOSFET
Manufacture ON Semiconductor
Total Page 10 Pages
PDF Download Download FDMQ8203 Datasheet PDF

Features: FDMQ8203 Dual N-Channel and Dual P-Chann el PowerTrench® MOSFET FDMQ8203 Gree nBridgeTM Series of High-Efficiency Bri dge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench® MOSFET N-Channe l: 100 V, 6 A, 110 mΩ P-Channel: -80 V , -6 A, 190 mΩ Features General Desc ription Q1/Q4: N-Channel „ Max rDS(on ) = 110 mΩ at VGS = 10 V, ID = 3 A „ Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A Q2/Q3: P-Channel „ Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A „ Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A „ Substantial efficienc y benefit in PD solutions „ RoHS Compl iant This quad mosfet solution provide s ten-fold improvement in power dissipa tion over diode bridge. Application „ High-Efficiency Bridge Rectifiers Top G4 S4 S4 G3 S3 S3 Bottom D3/ D1/ D4 D2 D3/ D1/ D4 D2 G1 S1 S1 G2 S2 S2 Pi n 1 MLP 4.5x5 S3 7 S3 8 Q3 (Pch) Q2 (Pch) 6 S2 5 S2 G3 9 4 G2 S4 10 S4 11 Q4 (Nch) Q1 (Nch) 3 S1 2 S1 G4 1 2 1 G1 D3,D4 to backside (isolated from D1,D2) D1,D2 to backside MOSFET Ma.

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FDMQ8203
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers
Dual N-Channel and Dual P-Channel PowerTrench® MOSFET
N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
Features
General Description
Q1/Q4: N-Channel
„ Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
„ Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
Q2/Q3: P-Channel
„ Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A
„ Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A
„ Substantial efficiency benefit in PD solutions
„ RoHS Compliant
This quad mosfet solution provides ten-fold improvement in
power dissipation over diode bridge.
Application
„ High-Efficiency Bridge Rectifiers
Top
G4
S4
S4
G3
S3
S3
Bottom
D3/ D1/
D4 D2
D3/ D1/
D4 D2
G1
S1
S1
G2
S2
S2
Pin 1
MLP 4.5x5
S3 7
S3 8
Q3 (Pch) Q2 (Pch)
6 S2
5 S2
G3 9
4 G2
S4 10
S4 11
Q4 (Nch)
Q1 (Nch)
3 S1
2 S1
G4 12
1 G1
D3,D4 to backside
(isolated from D1,D2)
D1,D2 to backside
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Power Dissipation for Single Operation
TC = 25 °C
Power Dissipation for Dual Operation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Q1/Q4
Q2/Q3
100 -80
±20 ±20
6 -6
10 -10
3.4 -2.6
12 -10
22 37
2.5
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
50
°C/W
160
Device Marking
FDMQ8203
Device
FDMQ8203
Package
MLP4.5x5
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2011 Semiconductor Components Industries, LLC.
August-2017,Rev 3
Publication Order Number:
FDMQ8203/D

                    
        






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